Strain imaging is a critical aspect in the design and characterization of opto-electronics, microelectronics, flexible electronics, and on-chip photonics. However, strain mapping techniques are often material specific and strain measurements in amorphous materials remain a challenge. Here, we demonstrate strain mapping and optical characterization of an amorphous semiconductor using scanning reflectance anisotropy microscopy. Using reflection anisotropy spectroscopy and finite element simulations on evaporated amorphous germanium films, we showcase the strain sensitivity of the ellipsometric parameters. We demonstrate nondestructive mapping for simple and complex strain states in amorphous systems. The sub-degree phase and amplitude sensitivity of the microscope is able to determine strain states on the order of 10−3.

中文翻译：

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使用扫描反射各向异性显微镜绘制非晶锗薄膜的应变图


应变成像是光电子学、微电子学、柔性电子学和片上光子学的设计和表征的一个关键方面。然而，应变映射技术通常是特定于材料的，并且非晶材料中的应变测量仍然是一个挑战。在这里，我们使用扫描反射各向异性显微镜演示非晶半导体的应变图和光学表征。利用反射各向异性光谱和蒸发非晶锗薄膜的有限元模拟，我们展示了椭圆参数的应变敏感性。我们演示了非晶态系统中简单和复杂应变状态的无损映射。显微镜的亚度相位和振幅灵敏度能够确定 10−3 量级的应变状态。