The negatively charged silicon vacancy center (\({{\rm{V}}}_{{\rm{Si}}}^{-}\)) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us from achieving the optimal operation conditions and reaching the maximum performance especially when integrated within quantum photonics. Here, we establish all the relevant intrinsic spin dynamics of the \({{\rm{V}}}_{{\rm{Si}}}^{-}\) center at cubic lattice site (V2) in 4H-SiC by an in-depth electronic fine structure modeling including the intersystem-crossing and deshelving mechanisms. With carefully designed spin-dependent measurements, we obtain all the previously unknown spin-selective radiative and non-radiative decay rates. To showcase the relevance of our work for integrated quantum photonics, we use the obtained rates to propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to three-photon GHZ or cluster states are readily within reach using the existing nanophotonic cavity technology.

碳化硅 (SiC) 中带负电的硅空位中心 (\({{\rm{V}}}_{{\rm{Si}}}^{-}\)) 是一种新兴的量子技术色心，涵盖量子传感、通信和计算。然而，目前有关这些色心的内部自旋光学动力学的信息有限，使我们无法实现最佳操作条件并达到最大性能，尤其是在集成到量子光子学中时。在这里，我们建立了 4H- 中立方晶格位点 (V2) 的 \({{\rm{V}}}_{{\rm{Si}}}^{-}\) 中心的所有相关本征自旋动力学SiC 通过深入的电子精细结构建模，包括系统间交叉和脱架机制。通过精心设计的自旋相关测量，我们获得了所有以前未知的自旋选择性辐射和非辐射衰减率。为了展示我们的工作与集成量子光子学的相关性，我们使用获得的速率来提出时间仓纠缠多光子 GHZ 和簇状态生成的实际实现。我们发现，使用现有的纳米光子腔技术可以轻松实现高达三光子 GHZ 或簇态。