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Dimension-Controlled VO2 Film for Optoelectronic Logic Gates and Information Encryption
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-07-24 , DOI: 10.1021/acsami.4c04546 Liang Li 1 , Ting Zhou 1 , Yi Xiao 1 , Shanguang Zhao 1 , Jinglin Zhu 1 , Meiling Liu 1 , Zhihan Lin 1 , Bowen Sun 1 , Jianjun Li 1 , Chongwen Zou 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-07-24 , DOI: 10.1021/acsami.4c04546 Liang Li 1 , Ting Zhou 1 , Yi Xiao 1 , Shanguang Zhao 1 , Jinglin Zhu 1 , Meiling Liu 1 , Zhihan Lin 1 , Bowen Sun 1 , Jianjun Li 1 , Chongwen Zou 1
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As the fields of photonics and information technology develop, a lot of novel applications based on VO2 material, such as optoelectronic computing and information encryption, have been developed. While the performance of these devices was not only closely associated with the VO2 phase transition properties but also depended on their dimensional characteristics. In the current study, we conducted the dimension-controlled vanadium dioxide (VO2) film growth, resulting in the epitaxial 2-dimensional (2D) VO2 film and well-distributed 3-dimensional (3D) VO2 crystal film deposition, respectively. It was revealed that, unlike the 2D film, the pronounced localized surface plasmon resonance dominated the near-infrared spectrum across the phase transition for the 3D VO2 film due to the naturally formed meta-surface structure, which showed a transmittance valley in the infrared spectrum after metallization. Based on this distinct infrared spectrum feature in the 3D VO2 film, we proposed an optoelectronic logic gate controlled by the input voltage and the probing Vis/IR light. By detecting the transmittance states of the probing light with different wavelengths, we achieved multistate encoding functions and demonstrated the information encryption application. This new conception device also showed great potential for some other applications such as optoelectronic coupled computing, information encryption, and optical near-field sensing computing.
中文翻译：
用于光电逻辑门和信息加密的尺寸控制 VO2 薄膜
随着光子学和信息技术领域的发展，许多基于VO 2材料的新型应用被开发出来，如光电计算、信息加密等。而这些器件的性能不仅与VO 2相变特性密切相关，而且还取决于它们的尺寸特性。在当前的研究中，我们进行了尺寸控制的二氧化钒（VO 2 ）薄膜生长，分别产生了外延二维（2D）VO 2薄膜和均匀分布的3维（3D）VO 2晶体薄膜沉积。结果表明，与 2D 薄膜不同，由于自然形成的超表面结构，明显的局域表面等离子体共振在整个相变过程中主导了 3D VO 2薄膜的近红外光谱，该结构在红外区域显示出透射率谷金属化后的光谱。基于3D VO 2薄膜中这种独特的红外光谱特征，我们提出了一种由输入电压和探测可见光/红外光控制的光电逻辑门。通过检测不同波长探测光的透射状态，实现了多态编码功能并演示了信息加密应用。这种新概念设备还显示出在光电耦合计算、信息加密和光学近场传感计算等其他应用方面的巨大潜力。
更新日期：2024-07-24
中文翻译：
用于光电逻辑门和信息加密的尺寸控制 VO2 薄膜
随着光子学和信息技术领域的发展，许多基于VO 2材料的新型应用被开发出来，如光电计算、信息加密等。而这些器件的性能不仅与VO 2相变特性密切相关，而且还取决于它们的尺寸特性。在当前的研究中，我们进行了尺寸控制的二氧化钒（VO 2 ）薄膜生长，分别产生了外延二维（2D）VO 2薄膜和均匀分布的3维（3D）VO 2晶体薄膜沉积。结果表明，与 2D 薄膜不同，由于自然形成的超表面结构，明显的局域表面等离子体共振在整个相变过程中主导了 3D VO 2薄膜的近红外光谱，该结构在红外区域显示出透射率谷金属化后的光谱。基于3D VO 2薄膜中这种独特的红外光谱特征，我们提出了一种由输入电压和探测可见光/红外光控制的光电逻辑门。通过检测不同波长探测光的透射状态，实现了多态编码功能并演示了信息加密应用。这种新概念设备还显示出在光电耦合计算、信息加密和光学近场传感计算等其他应用方面的巨大潜力。
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