Tailoring the Density of State of n-Type Conjugated Polymers through Solvent Engineering for Organic Electrochemical Transistors,ACS Applied Materials & Interfaces

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Tailoring the Density of State of n-Type Conjugated Polymers through Solvent Engineering for Organic Electrochemical Transistors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-07-22 , DOI: 10.1021/acsami.4c04917
Linlong Zhang _{1,

2} , Yazhuo Kuang _{1,

2} , Gang Ye ₁ , Jian Liu _{1,

2}

Affiliation

Conjugated polymers with ethylene glycol-type side chains are commonly used as channel materials in organic electrochemical transistors (OECTs). To improve the performance of these materials, new chemical structures are often created through synthetic routines. Herein, we demonstrate that the OECT performance of these polymers can also be improved by changing their density-of-state (DOS) profile through solvent engineering. Depending on the solvent polarity, it solvates the backbone and side chains of the conjugated polymer differently, leading to differences in molecule orientation, π-stacking paracrystallinity, and film defects, such as grain boundaries and pinholes. This then results in a change in the DOS profile of the polymer. A more intense and narrow-width DOS distribution is usually observed in organic films with an “edge on” orientation and fewer film defects, while films with a “face on” orientation and apparent defects show a broadened DOS profile. The OECT devices that use the polymer film with a more intense and narrow-width DOS profile exhibit a better-normalized transconductance and figure-of-merit μC* than those with a broadened DOS profile (0.74 to 4.29 S cm⁻¹ and 3.5 to 14.3 F cm⁻¹ V⁻¹ s⁻¹). This study provides useful insights into how the DOS profile affects the mixed ionic-electronic conduction performance and presents a new avenue for improving n-type OECT materials.

中文翻译：

通过有机电化学晶体管的溶剂工程定制 n 型共轭聚合物的态密度

具有乙二醇型侧链的共轭聚合物通常用作有机电化学晶体管（OECT）中的沟道材料。为了提高这些材料的性能，通常通过合成程序创建新的化学结构。在此，我们证明这些聚合物的 OECT 性能也可以通过溶剂工程改变其态密度 (DOS) 分布来提高。根据溶剂极性的不同，它会以不同的方式溶剂化共轭聚合物的主链和侧链，从而导致分子取向、π堆积准结晶性和薄膜缺陷（例如晶界和针孔）的差异。这会导致聚合物的 DOS 分布发生变化。通常在具有“边缘”取向和较少薄膜缺陷的有机薄膜中观察到更强烈和更窄宽度的 DOS 分布，而具有“正面”取向和明显缺陷的薄膜则显示出更宽的 DOS 分布。使用具有更强烈和更窄宽度 DOS 分布的聚合物薄膜的 OECT 器件比那些具有更宽 DOS 分布（0.74 至 4.29 S cm ^-1和 3.5 至14.3 F cm ^-1 V ^-1 s ^-1 )。这项研究提供了关于 DOS 分布如何影响混合离子电子传导性能的有用见解，并为改进 n 型 OECT 材料提供了一条新途径。

更新日期：2024-07-22

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