This study focuses on incorporating NaNbO₃ (NN) into the Ba_0.85Ca_0.15Zr_0.9Ti_0.1O₃ (BCZT) lattice to form (1 – x)BCZT-xNN ceramics. Although antiferroelectricity was not observed, an observed domain-movement-diminishment behavior with increasing NN dopant induced the formation of high polarization walls (HPWs) between adjacent C-phases. The 0.90BCZT-0.10NN composition exhibited superior polarization compared to most BCZT-based ferroelectrics, as validated by mathematical derivation. Integration of these findings revealed a W_rec of 3.86 J/cm³ at 360 kV/cm, with a high W_rec/E_b ratio defining energy consumption efficiency in dielectric capacitors. This work introduces a novel approach to fabricating low-consumption dielectric capacitors. Additionally, a significantly high W_rec of 5.36 J/cm³ was achieved with an NN dopant concentration of 0.30.

中文翻译：

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利用领域工程实现低功耗陶瓷电容器的高极化弛豫铁电体


本研究重点是将NaNbO ₃ (NN)掺入Ba _0.85 Ca _0.15 Zr _0.9 Ti _0.1 O ₃ (BCZT) 晶格形成 (1 – x)BCZT-xNN 陶瓷。尽管没有观察到反铁电性，但随着 NN 掺杂剂的增加，观察到的磁畴移动减少行为导致了相邻 C 相之间高极化壁 (HPW) 的形成。通过数学推导验证，与大多数 BCZT 基铁电体相比，0.90BCZT-0.10NN 组合物表现出优异的极化性能。综合这些发现显示，在 360 kV/cm 时，W _rec 为 3.86 J/cm ³ ，并且具有较高的 W _rec /E _b 的显着高 W _rec 。