Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact,The Journal of Physical Chemistry Letters

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Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2024-07-22 , DOI: 10.1021/acs.jpclett.4c01664
Michalis Loizos ₁ , Konstantinos Rogdakis _{1,

2} , Emmanuel Kymakis _{1,

2}

Affiliation

The complex ionic-electronic conduction in mixed halide perovskites enables their use beyond von Neumann architectures implemented in resistive switching memory devices. Although device fabrication based on perovskite compounds involves solution-processing at low temperatures, reducing further fabrication costs by eliminating expensive materials can improve their compatibility with upscalable deposition techniques. Notably, the substrate on which the perovskite active layer is developed has been reported to severely affect its quality and thus the overall device performance. Hereby, we demonstrate the sustainable manufacturing of memristive perovskite solar cells by replacing the expensive poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) that serves as a hole transporting layer (HTL) with a self-assembled monolayer (SAM), namely [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz). Multiple sequential memristive current–voltage characteristics of single devices are reported, and average data of multiple reference and targeted devices are compared. Resistive switching memory devices based on SAM exhibit improved performance having reduced average SET voltage values and narrower statistical variation compared to reference devices with PTAA. It is shown that both PTAA and SAM based devices exhibit high ON/OFF ratio of about 10³ operating at low switching electric fields. Replacing an expensive polymer-based HTL with this approach reduces fabrication costs compared to PTAA.

中文翻译：

使用自组装单层作为底部接触的可持续混合卤化物钙钛矿电阻开关存储器

混合卤化物钙钛矿中复杂的离子电子传导使其用途超出了电阻开关存储器件中实现的冯诺依曼架构。尽管基于钙钛矿化合物的器件制造涉及低温溶液处理，但通过消除昂贵的材料来进一步降低制造成本可以提高其与可升级沉积技术的兼容性。值得注意的是，据报道，钙钛矿活性层所用的基底会严重影响其质量，从而影响器件的整体性能。在此，我们展示了忆阻钙钛矿太阳能电池的可持续制造，通过用自组装单层（SAM），即[2-（3,6-二甲氧基-9 H-咔唑-9-基）乙基]膦酸（MeO-2PACz）。报告单个器件的多个连续忆阻电流-电压特性，并比较多个参考器件和目标器件的平均数据。与采用 PTAA 的参考器件相比，基于 SAM 的电阻开关存储器件表现出改进的性能，平均 SET 电压值降低且统计变化更窄。结果表明，基于 PTAA 和 SAM 的器件在低开关电场下工作时表现出约 10 ³的高开/关比。与 PTAA 相比，用这种方法取代昂贵的聚合物 HTL 可以降低制造成本。

更新日期：2024-07-22

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