Transition-metal doped topological insulators have been widely explored since the observation of quantum anomalous Hall effect (QAHE). Subsequently, the magnetic (Pb,Sn)(Te,Se) was predicted to possibly possess a high-temperature QAHE state. However, the fundamental understanding of Cr-doping-induced ferromagnetism in this system remains unclear. Here, we report the stable ferromagnetism in the high-crystalline Cr-doped SnTe films. Upon Cr doping, the magnetoconductance unveils a crossover from weak antilocalization to weak localization. Further increasing the Cr concentration to Cr_0.17Sn_0.83Te introduces a strong ferromagnetism with a Curie temperature of ~140 K. We detected a sizable spin moment m_s = 2.28 ± 0.23 μ_B/Cr and a suppressed orbital moment m_l = 0.02 μ_B/Cr. Cr dopants prefer to substitute the Sn sites and behave as divalent cations, as indicated by the experimental results and density function theory calculations. The controllable growth of magnetic SnTe thin films provides enlightenment towards the high-temperature QAHE in magnetic TCIs for the desired dissipationless transport in electronics.

自从观察到量子反常霍尔效应（QAHE）以来，过渡金属掺杂拓扑绝缘体得到了广泛的探索。随后，磁性(Pb,Sn)(Te,Se)被预测可能具有高温Q​​AHE状态。然而，对该系统中 Cr 掺杂引起的铁磁性的基本理解仍不清楚。在这里，我们报道了高结晶 Cr 掺杂 SnTe 薄膜中稳定的铁磁性。 Cr 掺杂后，磁导呈现出从弱反局域化到弱局域化的交叉。进一步将 Cr 浓度增加到 Cr _0.17 Sn _0.83 Te 引入了强铁磁性，居里温度约为 140 K。我们检测到了相当大的自旋矩 m _s = 2.28 ± 0.23 μ _B /Cr 和抑制轨道矩 m = 0.02 μ _B /Cr。实验结果和密度函数理论计算表明，Cr 掺杂剂更倾向于取代 Sn 位点并表现为二价阳离子。磁性 SnTe 薄膜的可控生长为磁性 TCI 中的高温 QAHE 提供了启示，以实现电子器件中所需的无耗散传输。