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Stabilizing Schottky junction in conjugated polymer diodes enables long-term reliable radio-frequency energy harvesting on plastic
npj Flexible Electronics ( IF 12.3 ) Pub Date : 2024-07-18 , DOI: 10.1038/s41528-024-00326-y
Yongwoo Lee , Boseok Kang , Sungjune Jung , Jimin Kwon

Due to their inherent flexibility, solution-processable conjugated polymers are increasingly being considered for the cost-effective production of thin-film semiconductor devices used in Internet of Everything (IoE) applications. With considerable improvements in charge carrier mobilities, the final challenge impeding the commercialization of conjugated polymers may be improving their environmental and electrical stabilities. Recent studies have improved the stability of computing devices (i.e., transistors) by eliminating interface traps and water molecules within conjugated polymers. However, the stability issue of Schottky diodes, which play a crucial role in configuring thin-film IoE devices used in wireless communication and energy harvesting, has been largely overlooked. This study reveals that aluminum, which is commonly used as a cathode metal in polymer Schottky diodes, creates a nonstoichiometric effect when deposited on conjugated polymers, thereby leading to the formation of charge traps over time, which reduces the rectification ratio of the Schottky diodes and induces a significant bias stress effect during operation. To address this issue, we introduce a zinc-oxide sacrificial interlayer between the conjugated polymer and cathode. This interlayer effectively eliminates the penetrated Al metal or ionized Al-induced nonstoichiometric effect without reducing the charge injection efficiency, achieving exceptional environmental and operational stability. The printed polymer Schottky diodes demonstrate consistent rectifying operation at 13.56 MHz for several months with negligible changes in electrical characteristics.



中文翻译:


稳定共轭聚合物二极管中的肖特基结可实现塑料上长期可靠的射频能量收集



由于其固有的灵活性,可溶液加工的共轭聚合物越来越多地被考虑用于经济高效地生产用于万物互联(IoE)应用的薄膜半导体器件。随着载流子迁移率的显着提高,阻碍共轭聚合物商业化的最终挑战可能是提高其环境和电稳定性。最近的研究通过消除共轭聚合物内的界面陷阱和水分子提高了计算设备(即晶体管)的稳定性。然而,肖特基二极管在配置用于无线通信和能量收集的薄膜 IoE 设备中发挥着至关重要的作用,其稳定性问题在很大程度上被忽视了。这项研究表明,铝通常用作聚合物肖特基二极管的阴极金属,当沉积在共轭聚合物上时,铝会产生非化学计量效应,从而导致随着时间的推移形成电荷陷阱,从而降低肖特基二极管的整流比和在操作过程中会产生显着的偏置应力效应。为了解决这个问题,我们在共轭聚合物和阴极之间引入了氧化锌牺牲中间层。该中间层有效消除了穿透的铝金属或电离铝引起的非化学计量效应,而不降低电荷注入效率,实现了卓越的环境和操作稳定性。印刷聚合物肖特基二极管在 13.56 MHz 下表现出连续几个月的一致整流操作,电气特性的变化可以忽略不计。

更新日期:2024-07-18
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