Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Perot Laser Diodes,Advanced Electronic Materials

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Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Perot Laser Diodes
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-07-19 , DOI: 10.1002/aelm.202400247
Jianyu Yang ₁ , Kangkai Tian ₂ , Chunshuang Chu ₂ , Yonghui Zhang ₁ , Ke Jiang ₃ , Xiaojuan Sun ₃ , Dabing Li ₃ , Xiao Wei Sun ₄ , Zi‐Hui Zhang _{1,

2}

Affiliation

In this work, AlGaN-based deep ultraviolet Fabry–Perot (FP) laser diodes (DUV LDs) are designed by using Technology Computer Aided Design (TCAD) simulations, and the physical models for DUV LDs are also developed. It is found that the optical absorption in the p-region significantly increases the optical loss and reduces the laser power. Hence, properly increasing the Al composition for the p-waveguide (p-WG) and the p-type cladding layer (CL) helps shift the optical field to the n-region, which is effective in decreasing the free-carrier absorption in the p-region. However, if not properly optimized, this will decrease the optical confinement factor, which will decrease the stimulated recombination rate between electrons and holes. Then, the electron leakage becomes significant. The studies show that the p-electron blocking layer (p-EBL) will not strongly affect the optical field profiles. Hence, the Al composition in the p-EBL has more freedom for electrical optimization. Therefore, a compromised design is required so that both the optical and the electrical properties can be improved.

中文翻译：

AlGaN 基深紫外法布里-珀罗激光二极管的设计和优化

在这项工作中，利用计算机辅助设计（TCAD）模拟技术设计了基于AlGaN的深紫外法布里-珀罗（FP）激光二极管（DUV LD），并开发了DUV LD的物理模型。研究发现p区的光吸收显着增加了光损耗并降低了激光功率。因此，适当增加p型波导（p-WG）和p型包层（CL）的Al成分有助于将光场转移到n区，这可以有效减少光场中的自由载流子吸收。 p区。然而，如果没有适当优化，这将降低光学限制因子，从而降低电子和空穴之间的受激复合率。然后，电子泄漏变得显着。研究表明p电子阻挡层（p-EBL）不会强烈影响光场分布。因此，p-EBL 中的 Al 成分具有更大的电气优化自由度。因此，需要折衷的设计，以提高光学和电学性能。

更新日期：2024-07-19

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