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Integrated Pristine van der Waals Homojunctions for Self-Powered Image Sensors
Advanced Materials ( IF 27.4 ) Pub Date : 2024-07-18 , DOI: 10.1002/adma.202404013 Yunxia Hu 1, 2 , Jun Wang 2 , Mohsen Tamtaji 2 , Yuan Feng 1 , Tsz Wing Tang 2 , Mohammadreza Amjadian 2 , Ting Kang 2 , Mengyang Xu 2 , Xingyi Shi 1 , Dongxu Zhao 3 , Yongli Mi 2 , Zhengtang Luo 2 , Liang An 1
Advanced Materials ( IF 27.4 ) Pub Date : 2024-07-18 , DOI: 10.1002/adma.202404013 Yunxia Hu 1, 2 , Jun Wang 2 , Mohsen Tamtaji 2 , Yuan Feng 1 , Tsz Wing Tang 2 , Mohammadreza Amjadian 2 , Ting Kang 2 , Mengyang Xu 2 , Xingyi Shi 1 , Dongxu Zhao 3 , Yongli Mi 2 , Zhengtang Luo 2 , Liang An 1
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Van der Waals junctions hold significant potentials for various applications in multifunctional and low-power electronics and optoelectronics. The multistep device fabrication process usually introduces lattice mismatch and defects at the junction interfaces, which deteriorate device performance. Here the layer engineering synthesis of van der Waals homojunctions consisting of 2H-MoTe2 with asymmetric thickness to eliminate heterogenous interfaces and thus obtain clean interfaces is reported. Experimental results confirm that the homostructure nature gives rise to the formation of pristine van der Waals junctions, avoiding chemical disorders and defects. The ability to tune the energy bands of 2H-MoTe2 continuously through layer engineering enables the creation of adjustable built-in electric field at the homojunction boundaries, which leads to the achievement of self-powered photodetection based on the obtained 2H-MoTe2 films. Furthermore, the successful integration of 2H-MoTe2 homojunctions into an image sensor with 10 × 10 pixels, brings about zero-power consumption and near-infrared imaging functions. The pristine van der Waals homojunctions and effective integration strategies shed new insights into the development of large-scale application for two-dimensional materials in advanced electronics and optoelectronics.
中文翻译：
用于自供电图像传感器的集成原始范德华同质结
范德华结在多功能和低功耗电子和光电子领域的各种应用中具有巨大的潜力。多步器件制造过程通常会在结界面处引入晶格失配和缺陷，从而降低器件性能。本文报道了由具有不对称厚度的2H-MoTe 2组成的范德华同质结的层工程合成，以消除异质界面，从而获得干净的界面。实验结果证实，同质结构性质导致原始范德华结的形成，避免了化学紊乱和缺陷。通过层工程连续调节2H-MoTe 2能带的能力使得能够在同质结边界处产生可调节的内置电场，从而实现基于所获得的2H-MoTe 2薄膜的自供电光电探测。此外，将2H-MoTe 2同质结成功集成到10×10像素的图像传感器中，实现了零功耗和近红外成像功能。原始的范德华同质结和有效的集成策略为二维材料在先进电子和光电子领域的大规模应用的发展提供了新的见解。
更新日期：2024-07-18
中文翻译：
用于自供电图像传感器的集成原始范德华同质结
范德华结在多功能和低功耗电子和光电子领域的各种应用中具有巨大的潜力。多步器件制造过程通常会在结界面处引入晶格失配和缺陷，从而降低器件性能。本文报道了由具有不对称厚度的2H-MoTe 2组成的范德华同质结的层工程合成，以消除异质界面，从而获得干净的界面。实验结果证实，同质结构性质导致原始范德华结的形成，避免了化学紊乱和缺陷。通过层工程连续调节2H-MoTe 2能带的能力使得能够在同质结边界处产生可调节的内置电场，从而实现基于所获得的2H-MoTe 2薄膜的自供电光电探测。此外，将2H-MoTe 2同质结成功集成到10×10像素的图像传感器中，实现了零功耗和近红外成像功能。原始的范德华同质结和有效的集成策略为二维材料在先进电子和光电子领域的大规模应用的发展提供了新的见解。
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