Two-dimensional (2D) materials are ideal candidates for building optoelectronic devices, owing to their fascinating photoelectric properties. However, most photodetectors based on individual 2D materials face difficulties in achieving both high responsivity and fast response. In this paper, we have fabricated high-quality vertically stacked MoS2/MoSe2 van der Waals (vdW) heterostructures using dry transfer method. The strong built-in electric field at the interface of type II heterostructure effectively facilitates the separation of photogenerated carriers. The vdW contact between channel material and transferred metal electrode effectively avoids the introduction of defects. These methods effectively enhance the performance of hybrid devices. Under 532 nm laser illumination, this photodetector exhibits high responsivity (528.1 A/W) and fast photoresponse (rise time ∼3.0 μs/decay time ∼31.3 μs). Furthermore, we demonstrated single-pixel image sensing capabilities of the device at room temperature across various modulation frequencies. Importantly, imaging at a frequency as high as 15 000 Hz was attained, indicating its great potential for next-generation, high-performance single-pixel image sensing applications.

中文翻译：

---

由范德华接触界面实现的快速、高响应度 MoS2/MoSe2 异质结构光电探测器


二维（2D）材料因其迷人的光电特性而成为构建光电器件的理想选择。然而，大多数基于单个二维材料的光电探测器在实现高响应度和快速响应方面面临困难。在本文中，我们采用干转移方法制备了高质量垂直堆叠的MoS2/MoSe2范德华（vdW）异质结构。 II型异质结界面处的强内建电场有效促进了光生载流子的分离。通道材料与转移金属电极之间的vdW接触有效地避免了缺陷的引入。这些方法有效地增强了混合设备的性能。在532 nm激光照射下，该光电探测器表现出高响应度（528.1 A/W）和快速光响应（上升时间∼3.0 μs/衰减时间∼31.3 μs）。此外，我们还展示了该设备在室温下在各种调制频率下的单像素图​​像传感能力。重要的是，实现了高达 15 000 Hz 的成像频率，这表明其在下一代高性能单像素图像传感应用中具有巨大潜力。