This work demonstrates a high-performance monolithically integrated GaN inverters platform, which incorporates enhancement-mode (E-mode) and depletion-mode (D-mode) GaN high-electron-mobility transistors (HEMTs) simultaneously using an Al:HfOx-based charge trapping layer. The developed E-mode HEMT exhibits a positive threshold voltage of 2.6 V, a high ON–OFF current ratio of 1.9 × 108, a current density of 376 mA/mm, and an ON-resistance of 15.31 Ω·mm. Moreover, the direct-coupled field-effect-transistor logic (DCFL) GaN inverter was characterized with and without D-mode device threshold voltage (VTH) modulation, demonstrating improved output swing and switching threshold shift by proposed VTH modulation. The optimized DCFL GaN inverter manifests a switching threshold of 2.34 V, a logic voltage output swing of 4.98 V, and substantial logic-low and logic-high noise margins of 2.16 and 2.49 V, respectively, at a supply voltage of 5 V. These results present a promising approach toward realizing monolithically integrated GaN logic circuits for power IC applications.

中文翻译：

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基于 CTL 的单片集成 E/D 模式 GaN 逆变器平台上的阈值电压调制，具有改进的电压传输性能


这项工作展示了一种高性能单片集成 GaN 逆变器平台，该平台使用 Al:HfOx 基同时集成了增强型（E 模式）和耗尽型（D 模式）GaN 高电子迁移率晶体管 (HEMT)电荷俘获层。所开发的E型HEMT具有2.6 V的正阈值电压、1.9 × 108的高开关电流比、376 mA/mm的电流密度和15.31 Ω·mm的导通电阻。此外，还对具有和不具有 D 模式器件阈值电压 (VTH) 调制的直接耦合场效应晶体管逻辑 (DCFL) GaN 逆变器进行了表征，证明了所提出的 VTH 调制改善了输出摆幅和开关阈值偏移。优化的 DCFL GaN 逆变器的开关阈值为 2.34V，逻辑电压输出摆幅为 4.98V，在电源电压为 5V 时，逻辑低噪声容限和逻辑高噪声容限分别为 2.16V 和 2.49V。研究结果为实现功率 IC 应用的单片集成 GaN 逻辑电路提供了一种有前途的方法。