The spin Hall effect (SHE) enables charge-to-spin conversion by electrical means and is promising for spintronic applications. Here, we report on the intrinsic spin Hall effect in the prototypical ferroelectric material HfO2 with charge doping using density functional theory calculations and theoretical analysis. We show that ferroelectric displacements are insensitive to charge doping and are sustained up to a large doping concentration of 0.4 electrons or holes per unit cell volume. In addition, the large spin Hall conductivity in the vicinity of the band edges is well preserved. Intriguingly, we demonstrate the giant spin Hall efficiency characterized by the sizable spin Hall angle of ∼0.1 in doped HfO2. These results add unexplored functionality to ferroelectric HfO2 and open opportunities for potential device applications.

中文翻译：

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掺杂铁电 HfO2 中的自旋霍尔效应


自旋霍尔效应（SHE）能够通过电气方式实现电荷到自旋的转换，并且在自旋电子学应用中具有广阔的前景。在这里，我们使用密度泛函理论计算和理论分析报告了电荷掺杂的原型铁电材料 HfO2 中的本征自旋霍尔效应。我们表明，铁电位移对电荷掺杂不敏感，并且可以维持到每单位晶胞体积 0.4 个电子或空穴的大掺杂浓度。此外，能带边缘附近的大自旋霍尔电导率也得到了很好的保留。有趣的是，我们证明了掺杂 HfO2 中巨大的自旋霍尔效率，其特征是自旋霍尔角约为 0.1。这些结果为铁电 HfO2 添加了未开发的功能，并为潜在的设备应用提供了机会。