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High-temperature quantum valley Hall effect with quantized resistance and a topological switch
Science ( IF 44.7 ) Pub Date : 2024-07-18 , DOI: 10.1126/science.adj3742
Ke Huang 1 , Hailong Fu 1 , Kenji Watanabe 2 , Takashi Taniguchi 3 , Jun Zhu 1, 4
Affiliation  

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

中文翻译:


具有量子电阻和拓扑开关的高温量子谷霍尔效应



拓扑绝缘体的边缘态可用于探索低维和拓扑界面上出现的基础科学。然而,事实证明,对于螺旋边缘态来说,实现稳健的电导量化具有挑战性。在这项工作中,我们展示了扭结态中的宽电阻平台(伯纳尔双层石墨烯中量子谷霍尔效应的表现),在零磁场下量子化为预测值。平台电阻对温度的依赖性非常弱,最高可达 50 开尔文,并且在数十毫伏的直流偏置窗口内保持平坦。我们演示了开/关比为 200 的拓扑控制开关的电气操作。这些结果证明了扭结态的鲁棒性和可调谐性及其在构建电子量子光学器件中的前景。
更新日期:2024-07-18
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