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A High-Frequency GaN-Based Motor Drive for Aircraft Electromechanical Actuators
IEEE Transactions on Industrial Electronics ( IF 7.5 ) Pub Date : 7-18-2024 , DOI: 10.1109/tie.2024.3413809
Bin Luo 1 , Guangzhao Luo 1 , Sihai Li 1 , Zezou An 1 , Hongming Shen 1 , Jian Sun 1
Affiliation  

To achieve superior dynamic response performance for aircraft electromechanical actuators (EMAs), high speed, low inductance, or multipole permanent magnet synchronous motors (PMSMs) prove to be ideal candidates. This necessitates a high-switching frequency for the motor drives. Cascode gallium nitride (GaN) devices present themselves as highly appealing for this specific application due to their high-switching frequency, low losses, and ability to operate at high temperatures. However, due to the intricate device structure and the high rates of change of voltage (dv/dt) and current (di/dt), GaN-based motor drives are more susceptible to oscillations, leading to electromagnetic interference (EMI) issues. This article presents a cascode GaN-based motor drive operating at a 100-kHz switching frequency for aircraft EMAs. A mathematical model is established to elucidate the mechanisms behind the turn-on dv/dt effect and turn-off di/dt effect of the cascode GaN-based inverter, shedding light on the occurrence of oscillations. The impact of gate driver parameters on the dv/dt and di/dt effects is thoroughly examined. Furthermore, a design method for RC snubber parameters is proposed to further alleviate the turn-off di/dt effect. Finally, experimental validations are conducted to confirm the efficacy of the proposed design methods and the performance of the high-frequency GaN-based motor drive.

中文翻译:


用于飞机机电执行器的高频 GaN 电机驱动



为了使飞机机电执行器 (EMA) 实现卓越的动态响应性能,高速、低电感或多极永磁同步电机 (PMSM) 被证明是理想的选择。这需要电机驱动器具有高开关频率。共源共栅氮化镓 (GaN) 器件因其高开关频率、低损耗以及在高温下工作的能力而对该特定应用极具吸引力。然而,由于复杂的器件结构以及电压 (dv/dt) 和电流 (di/dt) 的高变化率,基于 GaN 的电机驱动器更容易受到振荡的影响,从而导致电磁干扰 (EMI) 问题。本文介绍了一种用于飞机 EMA 的基于共源共栅 GaN 的电机驱动器,其工作频率为 100kHz。建立了数学模型来阐明共源共栅 GaN 逆变器的开通 dv/dt 效应和关断 di/dt 效应背后的机制,揭示了振荡的发生。彻底检查了栅极驱动器参数对 dv/dt 和 di/dt 效应的影响。此外,提出了一种RC缓冲器参数的设计方法,以进一步减轻关断di/dt效应。最后,进行实验验证,以确认所提出的设计方法的有效性和高频 GaN 电机驱动器的性能。
更新日期:2024-08-22
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