Enlightenment of Deionized-Water Bathing IGZO TFTs,Advanced Electronic Materials

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Enlightenment of Deionized-Water Bathing IGZO TFTs
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-07-17 , DOI: 10.1002/aelm.202400186
Yujia Qian _{1,

2} , Xishuang Gu ₃ , Ting Li _{1,

2} , Peixuan Hu _{1,

2} , Xiaohan Liu _{1,

2} , Junyan Ren ₂ , Lingyan Liang ₂ , Hongtao Cao _{2,

4}

Affiliation

At present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the most commonly used semiconductor material and is widely used in flat panel displays and various sensors, but its performance is greatly affected by environmental factors, especially water. This study investigates the instability of IGZO thin-film transistors (TFTs) soaked in deionized water. After 24 h bathing, the field-effect mobility and threshold voltage change a little, but the subthreshold swing, positive bias stress and negative bias stress stability undergo clear degradation. Through comprehensive examination of the changes in the chemical composition, surface morphology and thickness of the IGZO films, it's found that IGZO experiences selective etching by deionized water, and consequently the film surface becomes rough and rich of In and oxygen vacancies, which can explain the variations on device performance well. In addition to the bathing experiment performed on In₂O₃, Ga₂O₃, and ZnO TFTs, a schematic image of the reaction between water and IGZO is depicted, showing the preferential loss of Ga and Zn located next to the oxygen vacancy.

中文翻译：

去离子水浴IGZO TFT的启示

目前，非晶态氧化铟镓锌（IGZO）半导体已成为最常用的半导体材料，广泛应用于平板显示器和各种传感器，但其性能受环境因素尤其是水的影响较大。本研究调查了浸泡在去离子水中的 IGZO 薄膜晶体管 (TFT) 的不稳定性。浸泡24 h后，场效应迁移率和阈值电压变化不大，但亚阈值摆幅、正偏压应力和负偏压稳定性明显下降。通过综合考察IGZO薄膜的化学成分、表面形貌和厚度的变化，发现IGZO经历了去离子水的选择性刻蚀，导致薄膜表面变得粗糙且富含In和氧空位，这可以解释设备性能的变化很好。除了在 In ₂ O ₃ 、Ga ₂ O ₃和 ZnO TFT 上进行的沐浴实验外，还描绘了水和 IGZO 之间反应的示意图，显示了位于氧空位旁边的 Ga 和 Zn 的优先损失。

更新日期：2024-07-17

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