Inorganic NiOx emerges as a promising hole transport material for inverted perovskite solar cells (PSCs). However, the NiOx/perovskite interface in PSCs typically faces challenges such as energy level mismatch, existence of surface defects, complex active species etc., hindering the enhancement of power conversion efficiency (PCE) and device stability for NiOx-based PSCs. Herein, it is proposed an interfacial modification strategy with a donor–acceptor type semiconductor, in which the planar tetrathienopyrrole as electron-acceptor and triphenylamine-free indeno[1,2–b]carbazole as electron-donor. When fabricated as the interlayer between perovskite and NiOx, this semiconductor effectively tunes the interfacial energy level alignment, facilitates the hole extraction/transfer, bifacially passivates the defect sites within the interface, and suppresses the detrimental reaction between perovskite and NiOx. As a result, a significantly improved fill factor and open circuit voltage is achieved, attributing a champion PCE of 19.05 % with negligible hysteresis, outstripping that with pristine NiOx (18.12 %). Moreover, after CQ37 modification, PSC maintains over 78 % of its original PCE following 2000 h at room temperature, which compares excellently with that of the pristine NiOx-based device. This study renders the promise CQ37 to address the challenging issues that have hindered the process of NiOx-based PSCs.

中文翻译：

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通过 DA 型半导体增强 NiOx 基倒置钙钛矿太阳能电池的界面接触


无机 NiOx 成为一种有前景的用于倒置钙钛矿太阳能电池（PSC）的空穴传输材料。然而，PSC中的NiOx/钙钛矿界面通常面临能级失配、表面缺陷的存在、复杂活性物质等挑战，阻碍了基于NiOx的PSC功率转换效率（PCE）和器件稳定性的提高。在此，提出了一种供体-受体型半导体的界面改性策略，其中平面四噻吩并吡咯作为电子受体，不含三苯胺的茚并[1,2-b]咔唑作为电子供体。当制造为钙钛矿和 NiOx 之间的中间层时，该半导体有效地调节界面能级排列，促进空穴提取/转移，双面钝化界面内的缺陷位点，并抑制钙钛矿和 NiOx 之间的有害反应。结果，显着提高了填充因子和开路电压，冠军 PCE 达到 19.05%，滞后可忽略不计，超过了原始 NiOx (18.12%)。此外，经过CQ37修饰后，PSC在室温下2000小时后仍保持其原始PCE的78％以上，这与原始NiOx基器件相比非常出色。这项研究有望解决阻碍 NiOx 基 PSC 进程的挑战性问题。