Valley-Free Silicon Fins Caused by Shear Strain,Physical Review Letters

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Valley-Free Silicon Fins Caused by Shear Strain
Physical Review Letters ( IF 8.1 ) Pub Date : 2024-07-17 , DOI: 10.1103/physrevlett.133.037001
Christoph Adelsberger ₁ , Stefano Bosco ₁ , Jelena Klinovaja ₁ , Daniel Loss ₁

Affiliation

Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of computational energies, where the quantum information can leak. The energy of the valley states—typically 0.1 meV—depends on hardly controllable atomistic disorder and still constitutes a fundamental limit to the scalability of these architectures. In this work, we introduce designs of complementary metal-oxide-semiconductor (CMOS)-compatible silicon fin field-effect transistors that enhance the energy gap to noncomputational states by more than one order of magnitude. Our devices comprise realistic silicon-germanium nanostructures with a large shear strain, where troublesome valley degrees of freedom are completely removed. The energy of noncomputational states is therefore not affected by unavoidable atomistic disorder and can further be tuned in situ by applied electric fields. Our design ideas are directly applicable to a variety of setups and will offer a blueprint toward silicon-based large-scale quantum processors.

中文翻译：

剪切应变造成的无谷硅翅片

限制在硅量子点中的电子自旋是大规模量子计算机的有希望的候选者。然而，体硅导带的简并性会在计算能量窗口附近引入危险的额外能级，从而导致量子信息可能泄漏。谷态的能量（通常为 0.1 meV）取决于难以控制的原子无序，并且仍然对这些架构的可扩展性构成基本限制。在这项工作中，我们介绍了互补金属氧化物半导体（CMOS）兼容的硅鳍场效应晶体管的设计，该晶体管将非计算态的能隙提高了一个数量级以上。我们的设备由具有大剪切应变的真实硅锗纳米结构组成，其中麻烦的谷自由度被完全消除。因此，非计算态的能量不会受到不可避免的原子无序的影响，并且可以通过施加的电场进一步在原位进行调节。我们的设计思想可直接适用于各种设置，并将为基于硅的大规模量子处理器提供蓝图。

更新日期：2024-07-17

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