Si-Containing Reverse-Gradient Block Copolymer for Inorganic Pattern Amplification in EUV Lithography,ACS Macro Letters

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Si-Containing Reverse-Gradient Block Copolymer for Inorganic Pattern Amplification in EUV Lithography
ACS Macro Letters ( IF 5.1 ) Pub Date : 2024-07-15 , DOI: 10.1021/acsmacrolett.4c00285
Yemin Park ₁ , Seung Won Song ₁ , Jeehyun Hong ₁ , Hanhwi Jang ₁ , Gyu Rac Lee ₁ , Geon Yeong Kim ₁ , Yeon Sik Jung ₁

Affiliation

Although extreme ultraviolet lithography (EUVL) has emerged as a leading technology for achieving high quality sub-10 nm patterns, the insufficient pattern height of photoresist patterns remains a challenge. Directed self-assembly (DSA) of block copolymers (BCPs) is expected to be a complementary technology for EUVL due to its ability to form periodic nanostructures. However, for a combination with EUV patterns, it is essential to develop advanced BCP systems that are suited to inorganic-containing EUV photoresists and offer improved resolution limits, pattern quality, and etch resistance. Here, we report a reverse-gradient BCP system, poly[(styrene-gradient-pentafluorostyrene)-b-4-tert-butyldimetilsiloxystyrene] [P(S-g-PFS)-b-P4BDSS] BCP, which enables universally vertically oriented lamellae even in the absence of a neutral layer, while also containing a Si-containing block with high etch resistance. The gradient block, characterized by a gradual compositional transition from the block junction to the tail, plays a crucial role in creating an adequate surface energy contrast that energetically drives the formation of perpendicular lamellae without neutral layer. When used as a pattern height enhancement layer in EUVL, a high aspect ratio (3.29) of patterns was achieved, thereby offering a supplementary solution for next-generation EUVL.

中文翻译：

用于 EUV 光刻中无机图案放大的含硅反梯度嵌段共聚物

尽管极紫外光刻 (EUVL) 已成为实现高质量亚 10 nm 图案的领先技术，但光刻胶图案的图案高度不足仍然是一个挑战。嵌段共聚物 (BCP) 的定向自组装 (DSA) 由于能够形成周期性纳米结构，预计将成为 EUVL 的补充技术。然而，对于与 EUV 图案的组合，必须开发先进的 BCP 系统，该系统适用于含无机的 EUV 光刻胶，并提供改进的分辨率限制、图案质量和抗蚀刻性。在这里，我们报道了一种反梯度BCP系统，聚[(苯乙烯-梯度-五氟苯乙烯)- b -4-叔丁基二甲基硅氧基苯乙烯] [P(S- g -PFS)- b -P4BDSS] BCP，它可以实现普遍垂直取向片层即使在没有中性层的情况下，同时也含有具有高抗蚀刻性的含硅块。梯度块的特征是从块连接处到尾部的逐渐组成过渡，在产生足够的表面能对比方面发挥着至关重要的作用，该表面能对比有力地驱动了没有中性层的垂直片层的形成。当用作EUVL中的图案高度增强层时，实现了图案的高深宽比（3.29），从而为下一代EUVL提供了补充解决方案。

更新日期：2024-07-15

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