Realizing high efficiency of all Si-based light-emitting devices is currently one of interesting issues in order to develop monolithic opto-electronic integration on chips. Here, we report an electroluminescence device based on phosphorus (P)-doped silicon nanocrystals (Si NCs)/silicon carbide (SiC) multilayers by modulating carrier injection and recombination process. The p+-Si substrate is used instead of p-Si substrate for facilitating the hole injection into Si NCs. Additionally, the influences of annealing temperature on the device performance have been studied, and the optimized annealing temperature is achieved by balancing the crystallinity, defect state density, and recombination process.

中文翻译：

---

通过改进的载流子注入和复合工艺包含硅纳米晶体/SiC多层的高效电致发光器件


实现全硅基发光器件的高效率是目前开发单片光电集成芯片的有趣问题之一。在这里，我们通过调制载流子注入和复合过程，报道了一种基于磷（P）掺杂的硅纳米晶体（Si NC）/碳化硅（SiC）多层的电致发光器件。使用 p+-Si 衬底代替 p-Si 衬底以促进空穴注入 Si NCs。此外，还研究了退火温度对器件性能的影响，通过平衡结晶度、缺陷态密度和复合过程来实现优化的退火温度。