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High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
Applied Physics Letters ( IF 3.5 ) Pub Date : 2024-07-15 , DOI: 10.1063/5.0202063
Nana Sun 1 , Kazuki Okamoto 1 , Shinnosuke Yasuoka 1 , Soshun Doko 2 , Naoko Matsui 2 , Toshikazu Irisawa 2 , Koji Tsunekawa 2 , Takayoshi Katase 3 , Tomoyuki Koganezawa 4 , Tomotaka Nakatani 4 , Rosantha Kumara 4 , Osami Sakata 4 , Hiroshi Funakubo 1, 3
Affiliation  

The changes in the crystal structure and ferroelectric properties of (Al0.8Sc0.2)N films sandwiched between Pt and TiN electrodes were investigated by subjecting the films to post-heat-treatment at various temperatures up to 600 °C in both H2 and Ar gases. The remanent polarization underwent slight change, whereas the coercive field strengthened by approximately 9% as a result of the post-heat-treatment up to 600 °C irrespective of the atmosphere and electrode material. This change is much smaller than that reported for ferroelectric (Hf,Zr)O2 films as well as for Pb(Zr,Ti)O3 and SrBi2Ta2O9 films for a wide temperature range from 400 to 600 °C and is almost independent of the Pt and TiN electrodes. The high stability of (Al,Sc)N films with both Pt and TiN electrodes under H2 atmosphere is highly promising to stabilize the properties through the device fabrication process.

中文翻译:


(Al,Sc)N 薄膜中铁电对氢气的高稳定性



通过在氢气和氩气中在高达 600 °C 的不同温度下对薄膜进行后热处理,研究了夹在 Pt 和 TiN 电极之间的 (Al0.8Sc0.2)N 薄膜的晶体结构和铁电性能的变化气体。无论气氛和电极材料如何,在高达 600 °C 的后热处理后,剩余极化发生了轻微变化,而矫顽场增强了约 9%。在 400 至 600 °C 的宽温度范围内,这种变化比报道的铁电 (Hf,Zr)O2 薄膜以及 Pb(Zr,Ti)O3 和 SrBi2Ta2O9 薄膜的变化要小得多,并且几乎与 Pt 和氮化钛电极。具有 Pt 和 TiN 电极的 (Al,Sc)N 薄膜在 H2 气氛下具有高稳定性,非常有希望在器件制造过程中稳定其性能。
更新日期:2024-07-15
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