Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n-Si,Advanced Electronic Materials

当前位置： X-MOL 学术 › Adv. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n-Si
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-07-15 , DOI: 10.1002/aelm.202300909
Xingzhao Ma _{1,

2,

3} , Libin Tang _{1,

2,

3} , Menghan Jia _{2,

3,

4} , Yuping Zhang _{2,

3} , Wenbin Zuo _{2,

3} , Yuhua Cai _{2,

3} , Rui Li _{2,

3} , Liqing Yang _{2,

3} , Kar Seng Teng ₅

Affiliation

Ultraviolet (UV) photodetectors have gained much attention due to their numerous important applications ranging from environmental monitoring to space communication. To date, most p-NiO/n-Si heterojunction photodetectors (HPDs) exhibit poor UV responsivity and slow response. This is mainly due to a small valence band offset (ΔE_V) at the NiO/Si interface and a high density of dangling bonds at the silicon surface. Herein, an UV HPD consisting of NiO/Al₂O₃/n-Si is fabricated using magnetron sputtering technique. The HPD has a large rectification ratio of 2.4 × 10⁵. It also exhibits excellent UV responsivity (R) of 15.8 A/W at −5 V and and detectivity (D*) of 1.14 × 10¹³ Jones at −4 V, respectively. The excellent performance of the HPD can be attributed to the defect passivation at the interfaces of the heterojunction and the efficient separation of photogenerated carriers by the Al₂O₃ nanolayer. The external quantum efficiency (EQE) of the HPD as high as 5.4 × 10³%, hence implying a large optical gain due to carrier proliferation resulting from impact ionization. Furthermore, the ultrafast response speed with a rise time of 80 µs and a decay time of 184 µs are obtained.

中文翻译：

在 NiO/n-Si 中插入 Al2O3 纳米层的超高性能紫外光电探测器

紫外线（UV）光电探测器因其从环境监测到空间通信等众多重要应用而受到广泛关注。迄今为止，大多数 p-NiO/n-Si 异质结光电探测器 (HPD) 的紫外响应能力较差且响应速度较慢。这主要是由于 NiO/Si 界面处的价带偏移（Δ E _V ）较小以及硅表面的悬空键密度较高。本文中，采用磁控溅射技术制备了由NiO/Al ₂ O ₃ /n-Si组成的UV HPD。 HPD具有2.4×10 ⁵的大整流比。它还在 -5 V 下表现出优异的 UV 响应度 ( R ) 为 15.8 A/W，在 -4 V 下表现出 1.14 × 10 ¹³ Jones 的探测灵敏度 ( D* )。 HPD的优异性能可归因于异质结界面处的缺陷钝化以及Al ₂ O ₃纳米层对光生载流子的有效分离。 HPD的外量子效率( EQE )高达5.4×10 ³ %，因此意味着由于碰撞电离导致的载流子增殖而具有很大的光学增益。此外，还获得了上升时间为80μs、衰减时间为184μs的超快响应速度。

更新日期：2024-07-15

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文本刊介绍/投稿指南