<br>臭氧气体氧化（OGO）制备的隧道氧化物对 n 型多晶硅钝化接触（TOPCon）太阳能电池的增强钝化效果,Energy & Environmental Materials

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臭氧气体氧化（OGO）制备的隧道氧化物对 n 型多晶硅钝化接触（TOPCon）太阳能电池的增强钝化效果
Energy & Environmental Materials ( IF 13.0 ) Pub Date : 2024-07-12 , DOI: 10.1002/eem2.12795
Lei Yang ₁ , Yali Ou ₂ , Xiang Lv ₁ , Na Lin ₂ , Yuheng Zeng ₃ , Zechen Hu ₁ , Shuai Yuan ₁ , Jichun Ye ₂ , Xuegong Yu _{1,

3} , Deren Yang _{1,

3}

Affiliation

如今，重掺杂多晶硅（poly-Si）和隧道氧化物（SiO_x）的堆栈被广泛用于提高 n 型隧道氧化物钝化接触（TOPCon）硅太阳能电池的钝化性能。在这种情况下，开发能够生产高质量隧道 SiO_x 的在线先进制造工艺至关重要。本文提出了一种在线臭氧气体氧化（OGO）工艺来制备隧道 SiO_x，应用于 n 型 TOPCon 太阳能电池制造，与以前报道的在线等离子体辅助 N₂O 氧化（PANO）工艺相比，该工艺获得了更好的性能。为了探究其背后的机制，采用深能级瞬态光谱技术分析了OGO和PANO隧道SiO_x的电学特性。值得注意的是，对于 OGO 隧道 SiO_x，在带隙中检测到连续界面状态，界面状态密度（D_it）为 1.2 × 10^12-3.6 ×^{10 12} ^cm-2 ^eV-1 分布在 E_v + （0.15-0.40） eV 中，明显低于 PANO 隧道 SiO_x。此外，X 射线光电子能谱分析表明，OGO 隧道 SiO_x 中 SiO₂ （Si⁴⁺）的百分比高于 PANO 隧道 SiO_x 中的百分比。因此，我们将较低的 D_归因于 OGO 过程中对低价氧化硅形成的良好抑制作用。简而言之，OGO tunnel SiO_x 在 n 型 TOPCon 硅太阳能电池中的应用潜力巨大，可能可用于全球光伏行业。

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Enhanced Passivation Effect of Tunnel Oxide Prepared by Ozone-Gas Oxidation (OGO) for n-Type Polysilicon Passivated Contact (TOPCon) Solar Cells

Nowadays, a stack of heavily doped polysilicon (poly-Si) and tunnel oxide (SiO_x) is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact (TOPCon) silicon solar cells. In this case, it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_x. Herein, an in-line ozone-gas oxidation (OGO) process to prepare the tunnel SiO_x is proposed to be applied in n-type TOPCon solar cell fabrication, which has obtained better performance compared with previously reported in-line plasma-assisted N₂O oxidation (PANO) process. In order to explore the underlying mechanism, the electrical properties of the OGO and PANO tunnel SiO_x are analyzed by deep-level transient spectroscopy technology. Notably, continuous interface states in the band gap are detected for OGO tunnel SiO_x, with the interface state densities (D_it) of 1.2 × 10¹²–3.6 × 10¹² cm⁻² eV⁻¹ distributed in E_v + (0.15–0.40) eV, which is significantly lower than PANO tunnel SiO_x. Furthermore, X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO₂ (Si⁴⁺) in OGO tunnel SiO_x is higher than which in PANO tunnel SiO_x. Therefore, we ascribe the lower D_it to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process. In a nutshell, OGO tunnel SiO_x has a great potential to be applied in n-type TOPCon silicon solar cell, which may be available for global photovoltaics industry.

更新日期：2024-07-12

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