Integrating metal-halide perovskites with the industrially textured Czochralski silicon for perovskite/silicon tandem cells shows great promise for low-cost manufacturing and ideal light trapping. However, the conformal growth of high-quality perovskite film on fully textured silicon remains challenging due to the lack of effective regulation of structural evolution and residual strains. Here, we report a strain regulation strategy by forming a 3D/3D perovskite heterojunction at the buried interface through a vacuum-deposition method applicable to pyramidal texture. By tailoring the composition of buried buffer 3D perovskite, a controllable compressive strain is applied to the upper photoactive 3D perovskite, alleviating its residual tensile stress. We demonstrate that this strained heterostructure promotes the preferred crystal growth, reduces interfacial defect-induced recombination, and facilitates charge extraction. As a result, the fully textured perovskite/silicon tandem cell achieves a certified steady-state efficiency of 31.5% and retains over 95% of its initial efficiency after 800 h of continuous operation.

将金属卤化物钙钛矿与用于钙钛矿/硅串联电池的工业织构直拉硅相结合，为低成本制造和理想的光捕获带来了巨大的希望。然而，由于缺乏对结构演化和残余应变的有效调控，在全织构硅上共形生长高质量钙钛矿薄膜仍然具有挑战性。在这里，我们报告了一种应变调节策略，通过适用于金字塔结构的真空沉积方法在埋入界面处形成 3D/3D 钙钛矿异质结。通过调整掩埋缓冲 3D 钙钛矿的成分，可将可控的压缩应变施加到上部光活性 3D 钙钛矿上，从而减轻其残余拉应力。我们证明，这种应变异质结构促进了优选的晶体生长，减少了界面缺陷引起的复合，并促进了电荷提取。因此，全纹理钙钛矿/硅串联电池达到了 31.5% 的经认证稳态效率，并在连续运行 800 小时后保持了超过 95% 的初始效率。