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Self-powered broadband photodetectors based on Bi2O2Se with asymmetric contact areas
Chemical Engineering Journal ( IF 13.3 ) Pub Date : 2024-07-14 , DOI: 10.1016/j.cej.2024.153937
Xuanyu Ren , Xinyu Li , Xinxin He , Xuyang An , Yang Li , Bo Gao , Feng Gao , Jia Zhang , PingAn Hu

Self-powered broadband photodetectors are widely used in military reconnaissance, outdoor environmental sensing, wearable medical monitoring. Current commercial broadband photodetectors based on conventional materials are structurally complex, high cost, and external power consumption. 2D materials emerge as promising candidates for the development of novel photodetectors with superior performances. The construction of self-powered photodetectors predominantly employs the heterostructures or metal–semiconductor–metal (MSM) configurations, which still suffer from either multiple steps of material growth, transferring, alignment or various photolithography, film deposition techniques. Herein, a simple and effective asymmetric contact strategy is proposed to fabricate Bi2O2Se-based self-powered broadband photodetectors with asymmetric Au contact areas. The photodetector exhibits excellent performance under 350–1150 nm illumination. The responsivity is as high as 1.38, 4.76, and 0.63 A/W under 350, 550, and 1050 nm, respectively, which are much higher than those of the previously reported self-powered photodetectors based on Bi2O2Se nanosheets. Meanwhile, the self-powered photodetector has a high external quantum efficiency of 1073.16 % at 550 nm. In addition, the photodetector has excellent stability in the air and enables both imaging and optical communication. Owing to the simple architecture, cost-effectiveness, straightforward manufacturing process, and impressive performance, the proposed self-powered photodetectors hold considerable promise for future applications.

中文翻译:


基于 Bi2O2Se 的具有不对称接触面积的自供电宽带光电探测器



自供电宽带光电探测器广泛应用于军事侦察、户外环境传感、可穿戴医疗监测等领域。目前商用的基于传统材料的宽带光电探测器结构复杂、成本高、外部功耗大。二维材料成为开发具有卓越性能的新型光电探测器的有前途的候选材料。自供电光电探测器的构造主要采用异质结构或金属-半导体-金属(MSM)配置,但仍然受到材料生长、转移、对准或各种光刻、薄膜沉积技术的多个步骤的影响。在此,提出了一种简单有效的非对称接触策略来制造具有非对称金接触面积的 Bi2O2Se 基自供电宽带光电探测器。该光电探测器在 350–1150 nm 照明下表现出优异的性能。该器件在350 nm、550 nm和1050 nm下的响应度分别高达1.38、4.76和0.63 A/W,远高于之前报道的基于Bi2O2Se纳米片的自供电光电探测器。同时,自供电光电探测器在550 nm处具有高达1073.16%的外量子效率。此外,光电探测器在空气中具有优异的稳定性,可实现成像和光通信。由于结构简单、成本效益高、制造工艺简单且性能令人印象深刻,所提出的自供电光电探测器在未来的应用中具有广阔的前景。
更新日期:2024-07-14
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