Transition metal dichalcogenides (TMDs) are regarded as an optimal material for investigating the quantum effect of Spin-orbit coupling (SOC). Although many experiments have measured the physical properties of TMDs materials, the influence of the SOC effect on these properties cannot be determined. Here, we selected monolayer MoS and WS to investigate their physical properties in both the normal and SOC systems under varying pressures. By comparing the calculated results, the SOC effect significantly influences the effective mass of electrons and holes in the material, it determines the conductive properties of the material. This effect exerts a major influence on the dielectric properties of the material, and also enhances the polarization rate. Meanwhile, we have revised the traditional formula for calculating the raman intensity of symmetric dielectric tensors. The discovery of the super raman intensity effect of TMDs materials induced by the SOC effect has been made. Furthermore, we have discovered and explained how to modulate the TMDs materials in the visible light range to transition into a plasma state at specific wavelengths under pressure, and also reveal the influence of pressure on the strength of characteristic raman modes. The findings of this study provide pioneering theoretical support for the realization of the super raman intensity effect through the quantum effect and pressure manipulation of materials into a plasma state.

中文翻译：

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不同压力下单层MoS2和WS2自旋轨道耦合效应引起的超拉曼强度


过渡金属二硫化物（TMD）被认为是研究自旋轨道耦合（SOC）量子效应的最佳材料。尽管许多实验测量了TMDs材料的物理性能，但无法确定SOC效应对这些性能的影响。在这里，我们选择单层 MoS 和 WS 来研究它们在不同压力下的正常系统和 SOC 系统中的物理性质。通过对比计算结果可知，SOC效应显着影响材料中电子和空穴的有效质量，决定了材料的导电性能。这种效应对材料的介电性能产生重大影响，并且还提高了极化率。同时，我们对传统的对称介电张量拉曼强度计算公式进行了修改。发现了由SOC效应引起的TMDs材料的超拉曼强度效应。此外，我们还发现并解释了如何在可见光范围内调制TMDs材料，使其在压力下转变为特定波长的等离子体态，并揭示了压力对特征拉曼模式强度的影响。该研究结果为通过量子效应和压力操纵材料进入等离子体态来实现超拉曼强度效应提供了开创性的理论支持。