Liquid-Solid Combination Memristors with Switchable Resistance,Advanced Electronic Materials

当前位置： X-MOL 学术 › Adv. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Liquid-Solid Combination Memristors with Switchable Resistance
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-07-10 , DOI: 10.1002/aelm.202400167
Libing Duan ₁ , Xue Han ₁ , Ruochen Pei ₁ , Qianwen Peng ₁ , Shenghui Guo ₁ , Yangyang Li ₁ , Wangchang Geng ₂

Affiliation

Here a reconfigurable memristor is demonstrated by connecting ZnO film to a fluidic channel. The memristive characteristics are successfully demonstrated with an electrolyte solution. The benefit of using a microfluidic channel is that the memristive characteristics can be adjusted by changing the electrolyte solution in real-time. The neuromorphic functions such as long-term plasticity, Spiking-Rate-Dependent Plasticity (SRDP), and behavior associated with “learning experiences”are demostrated in the devices. The capability of real-time manipulating of memristive characteristics enables diverse manipulations on memristive characteristics of the devices, by doping of different concentrated and type of ions in the ZnO film. The electrolyte solution will open new possibilities for resistance switch manipulations, for the next generation neuromorphic computing.

中文翻译：

具有可切换电阻的液固组合忆阻器

这里通过将 ZnO 薄膜连接到流体通道来演示可重构忆阻器。利用电解质溶液成功地证明了忆阻特性。使用微流通道的好处是可以通过实时改变电解质溶液来调整忆阻特性。设备中演示了神经形态功能，例如长期可塑性、尖峰率依赖性可塑性（SRDP）以及与“学习体验”相关的行为。通过在ZnO薄膜中掺杂不同浓度和类型的离子，实时操纵忆阻特性的能力使得能够对器件的忆阻特性进行多种操纵。该电解质溶液将为电阻开关操作和下一代神经形态计算开辟新的可能性。

更新日期：2024-07-10

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文本刊介绍/投稿指南