In the pursuit of creating non-absorption window (NAW) structures in high-power semiconductor laser cavities, techniques like impurity-free vacancy diffusion and rapid thermal annealing induced quantum well intermixing were employed. The challenge is to induce a desired 30 nm blue shift while safeguarding the gain-emitting region from high-temperature annealing O²⁻ bombardment effectively inhibits quantum well mixing, as demonstrated through experiments. Epitaxial wafers subjected to this treatment exhibit just a 1 nm blue shift, compared to 32 nm without O²⁻ bombardment. These findings provide essential insights for protecting the gain-emitting region during NAW structure fabrication.

为了在高功率半导体激光腔中创建非吸收窗（NAW）结构，采用了无杂质空位扩散和快速热退火诱导量子阱混合等技术。挑战在于诱导所需的 30 nm 蓝移，同时保护增益发射区域免受高温退火的影响。实验证明，O ²⁻ 轰击可有效抑制量子阱混合。与没有 O ²⁻ 轰击的 32 nm 相比，经过这种处理的外延晶片仅表现出 1 nm 的蓝移。这些发现为在 NAW 结构制造过程中保护增益发射区提供了重要的见解。