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Wafer-Scale Growth and Transfer of High-Quality MoS2 Array by Interface Design for High-Stability Flexible Photosensitive Device
Advanced Science ( IF 14.3 ) Pub Date : 2024-07-07 , DOI: 10.1002/advs.202405050 Bingchen Lü 1, 2 , Yang Chen 1, 2 , Xiaobao Ma 1, 2 , Zhiming Shi 1, 2 , Shanli Zhang 1, 2 , Yuping Jia 1, 2 , Yahui Li 1, 2 , Yuang Cheng 1, 2 , Ke Jiang 1, 2 , Wenwen Li 3 , Wei Zhang 3 , Yuanyuan Yue 4 , Shaojuan Li 1, 2 , Xiaojuan Sun 1, 2 , Dabing Li 1, 2
Advanced Science ( IF 14.3 ) Pub Date : 2024-07-07 , DOI: 10.1002/advs.202405050 Bingchen Lü 1, 2 , Yang Chen 1, 2 , Xiaobao Ma 1, 2 , Zhiming Shi 1, 2 , Shanli Zhang 1, 2 , Yuping Jia 1, 2 , Yahui Li 1, 2 , Yuang Cheng 1, 2 , Ke Jiang 1, 2 , Wenwen Li 3 , Wei Zhang 3 , Yuanyuan Yue 4 , Shaojuan Li 1, 2 , Xiaojuan Sun 1, 2 , Dabing Li 1, 2
Affiliation
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Transition metal disulfide compounds (TMDCs) emerges as the promising candidate for new-generation flexible (opto-)electronic device fabrication. However, the harsh growth condition of TMDCs results in the necessity of using hard dielectric substrates, and thus the additional transfer process is essential but still challenging. Here, an efficient strategy for preparation and easy separation-transfer of high-uniform and quality-enhanced MoS2 via the precursor pre-annealing on the designed graphene inserting layer is demonstrated. Based on the novel strategy, it achieves the intact separation and transfer of a 2-inch MoS2 array onto the flexible resin. It reveals that the graphene inserting layer not only enhances MoS2 quality but also decreases interfacial adhesion for easy separation-transfer, which achieves a high yield of ≈99.83%. The theoretical calculations show that the chemical bonding formation at the growth interface has been eliminated by graphene. The separable graphene serves as a photocarrier transportation channel, making a largely enhanced responsivity up to 6.86 mA W−1, and the photodetector array also qualifies for imaging featured with high contrast. The flexible device exhibits high bending stability, which preserves almost 100% of initial performance after 5000 cycles. The proposed novel TMDCs growth and separation-transfer strategy lightens their significance for advances in curved and wearable (opto-)electronic applications.
中文翻译：
通过高稳定性柔性光敏器件的接口设计实现高质量MoS2阵列的晶圆级生长和转移
过渡金属二硫化物（TMDC）成为新一代柔性（光）电子器件制造的有希望的候选者。然而，TMDC的恶劣生长条件导致必须使用硬介电基板，因此额外的转移过程是必要的，但仍然具有挑战性。在这里，展示了一种通过在设计的石墨烯插入层上进行前驱体预退火来制备和轻松分离转移高度均匀且质量增强的MoS 2 的有效策略。基于这种新颖的策略，它实现了2英寸MoS 2阵列的完整分离并转移到柔性树脂上。结果表明，石墨烯插入层不仅提高了MoS 2质量，而且降低了界面粘附力，易于分离转移，实现了约99.83%的高产率。理论计算表明，生长界面处的化学键形成已被石墨烯消除。可分离的石墨烯作为光载流子传输通道，大大提高了响应度，高达6.86 mA W -1 ，并且光电探测器阵列也适合高对比度成像。该柔性器件表现出高弯曲稳定性，在 5000 次循环后几乎 100% 保持初始性能。所提出的新颖的 TMDC 生长和分离转移策略减轻了它们对弯曲和可穿戴（光电）电子应用进步的重要性。
更新日期：2024-07-07
中文翻译：
通过高稳定性柔性光敏器件的接口设计实现高质量MoS2阵列的晶圆级生长和转移
过渡金属二硫化物（TMDC）成为新一代柔性（光）电子器件制造的有希望的候选者。然而，TMDC的恶劣生长条件导致必须使用硬介电基板，因此额外的转移过程是必要的，但仍然具有挑战性。在这里，展示了一种通过在设计的石墨烯插入层上进行前驱体预退火来制备和轻松分离转移高度均匀且质量增强的MoS 2 的有效策略。基于这种新颖的策略，它实现了2英寸MoS 2阵列的完整分离并转移到柔性树脂上。结果表明，石墨烯插入层不仅提高了MoS 2质量，而且降低了界面粘附力，易于分离转移，实现了约99.83%的高产率。理论计算表明，生长界面处的化学键形成已被石墨烯消除。可分离的石墨烯作为光载流子传输通道，大大提高了响应度，高达6.86 mA W -1 ，并且光电探测器阵列也适合高对比度成像。该柔性器件表现出高弯曲稳定性，在 5000 次循环后几乎 100% 保持初始性能。所提出的新颖的 TMDC 生长和分离转移策略减轻了它们对弯曲和可穿戴（光电）电子应用进步的重要性。
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