In this study, we investigate the interfacial reactions between GaO nanowires (NWs) and Ti contacts during annealing processes through in-situ transmission electron microscopy (TEM) observations. A thin GaTi intermetallic compound was observed to form at the Ti/GaO interface, coinciding with a transition in the NW device’s contact behavior from Schottky to ohmic upon annealing at 470 °C. Utilizing in-situ TEM, we monitored the evolution of the GaTi layer, revealing Ga atoms as the primary diffusing species within the GaO NW, evidenced by asymmetric diffusion at the interface. GaTi intermetallic compound effectively reducing the energy barrier between GaO NW and Ti electrode, contributing to linear electrical transport characteristics. This investigation underscores the significance of interface engineering and offers valuable insights for future electronic applications utilizing GaO NWs.

中文翻译：

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揭示 Ti 和 Ga2O3 纳米线之间的界面工程动力学


在这项研究中，我们通过原位透射电子显微镜（TEM）观察研究了退火过程中GaO纳米线（NW）和Ti接触之间的界面反应。观察到在 Ti/GaO 界面处形成了薄的 GaTi 金属间化合物，这与 NW 器件在 470°C 退火后接触行为从肖特基到欧姆的转变一致。利用原位 TEM，我们监测了 GaTi 层的演化，揭示了 Ga 原子是 GaO 纳米线内的主要扩散物质，界面处的不对称扩散证明了这一点。 GaTi金属间化合物有效降低GaO NW和Ti电极之间的能垒，有助于线性电传输特性。这项研究强调了界面工程的重要性，并为利用 GaO 纳米线的未来电子应用提供了宝贵的见解。