Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor,Advanced Electronic Materials

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Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-07-02 , DOI: 10.1002/aelm.202400067
José Carlos Pérez‐Martínez ₁ , Diego Martín‐Martín ₁ , Belén Arredondo ₁ , Beatriz Romero ₁

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Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI₃ perovskite (800 nm) films with structure FTO/MAPbI₃/polymethyl methacrylate (PMMA)/Ag are presented. Reproducible and reliable bipolar switching characteristics are demonstrated with an ultra-low operating voltage (−0.1 V), high ON/OFF ratio (10⁶), endurance (>2 × 10³ times) and a record retention time (>10⁵s). The I–V curve of the first cycle exhibits self-formed conductive filaments. These are attributed to the presence of metallic Pb resulting from an excess of PbI₂ in the perovskite film. The subsequent activation process involves the formation of conductive filaments, consisting of either iodide vacancies or migrated charged metals. Numerical simulations are then carried out to understand the nature of these conductive filaments and the role of the internal electric field in the migration of iodide ions, iodide vacancies, and Ag cations. Finally, an exhaustive model is proposed that explains the set and reset processes governing the first voltage cycle and the steady state, at different voltage ranges. In summary, this work offers a novel and thorough perspective of the complete resistive switching (RS) behavior in a MAPbI₃/buffer/Ag memristor, supported by numerical simulations.

中文翻译：

揭示高性能卤化物钙钛矿忆阻器中导电丝的形成

卤化物钙钛矿（HP）因其独特的特性而成为用于忆阻器器件的有前途的材料。在本研究中，提出了基于具有FTO/MAPbI ₃ /聚甲基丙烯酸甲酯(PMMA)/Ag结构的厚MAPbI ₃钙钛矿(800 nm)薄膜的非易失性阻变存储器件。超低工作电压 (−0.1 V)、高开/关比 (10 ⁶ )、耐用性 (>2 × 10 ³倍) 和创纪录的保留时间 (>10 ⁵ s) 展现了可重复且可靠的双极开关特性）。第一个周期的I-V曲线显示出自形成的导电丝。这些归因于钙钛矿薄膜中过量的PbI ₂导致金属Pb的存在。随后的激活过程涉及导电丝的形成，导电丝由碘化物空位或迁移的带电金属组成。然后进行数值模拟，以了解这些导电丝的性质以及内部电场在碘离子、碘空位和银阳离子迁移中的作用。最后，提出了一个详尽的模型，解释了在不同电压范围下控制第一个电压周期和稳态的设置和重置过程。总之，这项工作为 MAPbI ₃ /缓冲器/Ag 忆阻器中的完整电阻开关 (RS) 行为提供了新颖而全面的视角，并得到数值模拟的支持。

更新日期：2024-07-02

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