Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz.

驱动或阻止高频电磁信号（通常为几千兆赫到几十千兆赫）的射频开关是现代通信设备中的重要组件。然而，对更高数据传输速率的需求需要能够在超过100GHz的频率下工作的射频开关，这对当前技术来说是一个挑战。在这里，我们报告了基于多层六方氮化硼的双极忆阻射频开关，可以在高达 260GHz 的频率下工作。双极性行为有助于降低外围硬件要求，这是由于焦耳效应辅助重置所致。我们展示了 21 个器件的开关情况，其低电阻状态平均为 294 Ω，耐久性为 2,000 个周期。通过进一步的偏置优化，我们在超过 475 个周期内将电阻降低至 9.3±3.7Ω，并在 120 GHz 时实现 0.9 dB 的插入损耗。我们还构建了一个串并联器件配置，在 120GHz 时隔离度为 35dB。