Inorganic photochromic (PC) materials are gaining increasing recognition as promising candidates for applications in optical storage and information display. However, conventional photochromic materials exhibit sluggish coding rates and a deficiency in intelligent response for writing and erasing under multiple excitation sources. This deficiency contributes to suboptimal readout/decoding efficiency and storage security. Here, we show a BaNaNbO:Er photochromic material with photoluminescence reversible modulation that can fast respond to both ultraviolet light and 532 nm laser within about 1 s, which accompanied by thermal bleaching. The PC mechanism which is based on defect state exchanges between oxygen vacancy defects and color centers is attributed to the structural flexibility of Nb-O systems and oxygen vacancy increased under irradiation. More importantly, it shows differential PC decay behavior in response to X-ray and UV light due to the difference in the number of trapped carriers. Therefore, a simple strategy based on different self-recovery levels induced by double excitation is constructed to develop an encrypted optical memory model. This fast and differential excitation source response behavior hopefully stimulates the development of new encrypted optical memory.

中文翻译：

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基于缺陷态交换的紫外和X射线诱导光致变色材料


无机光致变色（PC）材料作为光学存储和信息显示应用的有希望的候选材料越来越受到人们的认可。然而，传统的光致变色材料表现出缓慢的编码速率以及在多种激励源下写入和擦除的智能响应的缺陷。这一缺陷导致读出/解码效率和存储安全性不佳。在这里，我们展示了一种具有光致发光可逆调制的 BaNaNbO:Er 光致变色材料，可以在约 1 秒内快速响应紫外光和 532 nm 激光，并伴有热漂白。基于氧空位缺陷和色心之间的缺陷态交换的PC机制归因于Nb-O体系的结构灵活性和辐照下氧空位的增加。更重要的是，由于捕获载流子数量的差异，它在 X 射线和紫外光下表现出不同的 PC 衰变行为。因此，构建了一种基于双激发引起的不同自恢复水平的简单策略来开发加密的光学存储模型。这种快速且差异化的激励源响应行为有望刺激新型加密光学存储器的开发。