Ferroelectric materials have aroused increasing interest in the field of self-powered ultraviolet (UV) photodetectors (PDs) for their switchable spontaneous polarization. However, the utilization of ferroelectric materials to modulate the built-in electric field and energy band at the junction interface has rarely been investigated. Herein, we design and fabricate self-powered solar-blind UV PDs based on a Ga₂O₃/ZnO:V heterojunction. The performance of the Ga₂O₃/ZnO:V PD is significantly enhanced through the reasonable coupling of ferroelectricity and piezoelectricity within the ZnO:V film. The device at 260 nm exhibits excellent photoelectric properties with high peak responsivity of 64.5 mA/W, a specific detectivity of 3.8 × 10¹⁰ Jones, and a rise/decay time of 1.9/45.2 μs, together with reproducibility and stability. Systematical energy band diagram analysis reveals that the excellent performance of Ga₂O₃/ZnO:V PD can be attributed to the driving forces arising from the addition of the depolarization field and piezoelectric field, which increases the intensity of built-in electric field and promotes the separation and transport of photogenerated carriers at the heterojunction interface. The findings of our research provide a novel avenue and valuable guidance for the design of high-performance self-powered photodetectors.

中文翻译：

---

通过铁电和压电耦合增强自供电 Ga2O3/ZnO:V 异质结日盲紫外光电探测器的性能


铁电材料因其可切换的自发极化而引起了自供电紫外 (UV) 光电探测器 (PD) 领域越来越多的兴趣。然而，利用铁电材料来调制结界面处的内置电场和能带的研究很少。在此，我们设计并制造了基于 Ga ₂ O ₃ /ZnO:V 异质结的自供电日盲 UV PD。通过ZnO:V薄膜内铁电性和压电性的合理耦合，Ga ₂ O ₃ /ZnO:V PD的性能得到显着增强。该器件在 260 nm 处表现出优异的光电特性，峰值响应率为 64.5 mA/W，比探测率为 3.8 × 10 ¹⁰ Jones，上升/衰减时间为 1.9/45.2 μs，并且具有重现性和稳定性。系统能带图分析表明Ga ₂ O ₃ /ZnO:V PD的优异性能可归因于去极化场和压电场相加产生的驱动力，增加了内建电场的强度，促进了异质结界面光生载流子的分离和传输。我们的研究结果为高性能自供电光电探测器的设计提供了一条新颖的途径和有价值的指导。