Sequential infiltration synthesis (SIS) is a scalable and valuable technique for the synthesis of organic–inorganic materials with several potential applications at the industrial level. Despite the increasing interest for this technique, a clear picture of the fundamental physicochemical phenomena governing the SIS process is still missing. In this work, infiltration of Al₂O₃ into thin poly(methyl methacrylate) (PMMA) films using trimethyl aluminum (TMA) and H₂O as precursors is investigated by operando dynamic spectroscopic ellipsometry (SE) analysis. The TMA diffusion coefficient values at temperatures ranging from 70 to 100 °C are determined, and the activation energy for the TMA diffusion process in PMMA is found to be E_a = 2.51 ± 0.03 eV. Additionally, systematic data about reactivity of TMA molecules with the PMMA matrix as a function of temperature are obtained. These results provide important information, paving the way to the development of a comprehensive theory for the modeling of the SIS process.

中文翻译：

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PMMA 薄膜中 Al2O3 的连续渗透合成：通过操作光谱椭圆光度法研究温度


顺序渗透合成（SIS）是一种可扩展且有价值的有机-无机材料合成技术，在工业层面具有多种潜在应用。尽管人们对这项技术越来越感兴趣，但仍然缺乏控制 SIS 过程的基本物理化学现象的清晰图景。在这项工作中，使用三甲基铝 (TMA) 和 H ₂ O 作为渗透剂将 Al ₂ O ₃ 渗透到聚甲基丙烯酸甲酯 (PMMA) 薄膜中。通过操作动态光谱椭圆光度 (SE) 分析研究前体。确定了 70 至 100 °C 温度范围内的 TMA 扩散系数值，发现 PMMA 中 TMA 扩散过程的活化能为 E _a = 2.51 ± 0.03 eV。此外，还获得了 TMA 分子与 PMMA 基质的反应性随温度变化的系统数据。这些结果提供了重要信息，为 SIS 过程建模的综合理论的发展铺平了道路。