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Suppression of Deep-Level Defects and Interface Modification in Antimony Sulfide Thin-Film Solar Cells Via Solution-Processed Sulfurization
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2024-06-28 , DOI: 10.1021/acsaem.4c01013 Xuerui Li 1 , Ausaf Ali Shah 1 , Muhammad Abbas 1 , Juguang Hu 1 , Zhuanghao Zheng 1 , Shuo Chen 1 , Zhenghua Su 1 , Jun Zhao 1 , Muhammad Ishaq 1 , Guangxing Liang 1
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2024-06-28 , DOI: 10.1021/acsaem.4c01013 Xuerui Li 1 , Ausaf Ali Shah 1 , Muhammad Abbas 1 , Juguang Hu 1 , Zhuanghao Zheng 1 , Shuo Chen 1 , Zhenghua Su 1 , Jun Zhao 1 , Muhammad Ishaq 1 , Guangxing Liang 1
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Antimony sulfide (Sb2S3) has garnered considerable interest in photovoltaic technology due to its excellent optoelectronic properties. However, theoretical calculations have revealed complex defect properties in Sb2S3, potentially impacting the power conversion efficiency (PCE). In this study, based on the effect of Sb2S3 absorber thickness and annealing temperature on the performance of photovoltaic devices, the absorber surface was treated via solution-processed sulfurization using thioacetamide to replenish missing sulfur elements and mitigate interfacial and deep bulk defects. Additionally, this treatment improved the hydrophilic nature of the absorber layer, facilitating subsequent spin-coating of the hole transport layer. Consequently, the efficiency of the champion device increased from 5.90% to 6.50% under standard sunlight, with open-circuit voltage, short-circuit density, and fill factor values of 695 mV, 17.28 mA/cm2, and 54.11%, respectively. Furthermore, owing to the inherent high bandgap of Sb2S3 and the bandgap widening upon solution-processed sulfurization effect, the device demonstrated a PCE of 10.17% under 1000 lx room illumination, making it promising for indoor applications in the future development of Sb2S3-based solar cells.
中文翻译：
通过溶液硫化抑制硫化锑薄膜太阳能电池的深层缺陷和界面改性
硫化锑（Sb 2 S 3 ）由于其优异的光电性能而在光伏技术中引起了相当大的兴趣。然而，理论计算揭示了 Sb 2 S 3 中复杂的缺陷特性，可能会影响功率转换效率（PCE）。本研究基于Sb 2 S 3 吸收体厚度和退火温度对光伏器件性能的影响，采用硫代乙酰胺对吸收体表面进行溶液硫化处理，补充缺失的硫元素并减轻界面和深层块体缺陷。此外，这种处理改善了吸收层的亲水性，有利于随后空穴传输层的旋涂。因此，冠军器件在标准阳光下的效率从 5.90% 提高到 6.50%，开路电压、短路密度和填充因子值为 695 mV、17.28 mA/cm 2 ，和 54.11%。此外，由于Sb 2 S 3 固有的高带隙以及溶液硫化效应导致带隙变宽，该器件在1000 lx室内照明下表现出10.17%的PCE，使得Sb 2 S 3 基太阳能电池未来的室内应用前景广阔。
更新日期：2024-06-28
中文翻译：
通过溶液硫化抑制硫化锑薄膜太阳能电池的深层缺陷和界面改性
硫化锑（Sb 2 S 3 ）由于其优异的光电性能而在光伏技术中引起了相当大的兴趣。然而，理论计算揭示了 Sb 2 S 3 中复杂的缺陷特性，可能会影响功率转换效率（PCE）。本研究基于Sb 2 S 3 吸收体厚度和退火温度对光伏器件性能的影响，采用硫代乙酰胺对吸收体表面进行溶液硫化处理，补充缺失的硫元素并减轻界面和深层块体缺陷。此外，这种处理改善了吸收层的亲水性，有利于随后空穴传输层的旋涂。因此，冠军器件在标准阳光下的效率从 5.90% 提高到 6.50%，开路电压、短路密度和填充因子值为 695 mV、17.28 mA/cm 2 ，和 54.11%。此外，由于Sb 2 S 3 固有的高带隙以及溶液硫化效应导致带隙变宽，该器件在1000 lx室内照明下表现出10.17%的PCE，使得Sb 2 S 3 基太阳能电池未来的室内应用前景广阔。
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