ZnO-SrCO-CoO-SiO varistor ceramics were fabricated using the solid state method. Structural, morphological characterizations and varistor characteristics of samples were systematically studied. Average grain size is gradually reduced from 13.74 to 6.67 μm, resulting in a simultaneous increase of breakdown gradient E from 157.14 to 339.29 V mm. An increase of doping amount of SiO from 0 to 0.50 mol% contributes to the positive influences on double Schottky barrier of ZnO-SrCO-CoO varistors. The sample doped by 0.50 mol% SiO exhibits the highest height of double Schottky barrier φ of 2.99 eV resulting in the high nonlinear coefficient α equal to 76.83 and small value of leakage current density I less than 0.29 μA cm among the samples, which may be attributed to the solid solution reactions of SiO and CoO in grain boundaries. The fabrication of ZnO-SrCO-CoO-SiO represents the low-cost, sustainable development and environmental friendliness, providing a high performance candidate material for dominant ZnO-BiO based varistor ceramics.

中文翻译：

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SiO2对ZnO-SrCO3-Co2O3陶瓷的相组成、显微结构和电性能的影响


采用固相法制备了 ZnO-SrCO-CoO-SiO 压敏陶瓷。对样品的结构、形态表征和压敏电阻特性进行了系统研究。平均晶粒尺寸从13.74μm逐渐减小到6.67μm，导致击穿梯度E同时从157.14Vmm增加到339.29Vmm。 SiO掺杂量从0增加到0.50mol%有助于对ZnO-SrCO-CoO压敏电阻的双肖特基势垒产生积极影响。掺杂 0.50mol% SiO 的样品表现出最高的双肖特基势垒高度 2.99eV，导致样品中非线性系数 α 高达 76.83，漏电流密度 I 值小于 0.29 μA cm，这可能是归因于 SiO 和 CoO 在晶界的固溶反应。 ZnO-SrCO-CoO-SiO的制备代表了低成本、可持续发展和环境友好，为主导的ZnO-BiO基压敏电阻陶瓷提供了高性能候选材料。