Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n‐type 2D materials like MoS2 and WS2, while p‐type 2D materials such as WSe2 remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characteristics of both mono and bi‐layer WSe2 is studied. Through coupling atomic force microscopy (AFM) nanoindentation techniques and conductive AFM, the ability to finely tune the electronic band structure of WSe2 is demonstrated. The research offers valuable mechanistic insights into understanding how WSe2's electronic properties respond to mechanical strain, a critical prerequisite for the development of flexible photoelectronic devices. It is also observed that under high pressure, the AFM tip/monolayer WSe2/metal substrate junction transitions from Schottky to Ohmic contact, attributed to significant charge injection from the substrate to the WSe2. These findings are significant for designing efficient metal/semiconductor contact in thin and flexible PMOS (p‐type Metal–Oxide–Semiconductor) devices.

中文翻译：

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原子薄 WSe2 的应变驱动电带隙调谐


通过机械应变调节 2D 材料的电性能主要集中在 MoS2 和 WS2 等 n 型 2D 材料上，而 WSe2 等 p 型 2D 材料仍然相对未经探索。在这里，研究了受控机械应变对单层和双层 WSe2 电子传输特性的影响。通过原子力显微镜 (AFM) 纳米压痕技术和导电 AFM 的耦合，展示了微调 WSe2 电子能带结构的能力。这项研究为理解 WSe2 的电子特性如何响应机械应变提供了有价值的机制见解，这是开发柔性光电器件的关键先决条件。还观察到，在高压下，AFM 尖端/单层 WSe2/金属基底结从肖特基接触转变为欧姆接触，这归因于从基底到 WSe2 的大量电荷注入。这些发现对于在薄型柔性 PMOS（p 型金属氧化物半导体）器件中设计高效金属/半导体接触具有重要意义。