Phase change memory (PCM) is among the most promising candidates for the next generation of storage‐class and main memory systems in the computing era beyond Moore's law. However, the widespread installment of PCM devices is limited by the high price‐per‐bit and complex fabrication process. In this paper, it is shown that functional PCM memory devices can be printed, proving low‐cost avenues for non‐silicon memory technologies. Taking Ge‐Sb‐Te (GST) as a case study, PCM inks are prepared and optimize their structural, rheological, and printing parameters. GST layers are then printed onto PCM devices in the planar configuration, showing excellent performance, such as non‐volatility, resistivity contrast, low cycle‐to‐cycle variability, and endurance of at least 100 cycles. This paper provides a novel approach to liquid‐based engineered PCM devices through inkjet printing, enabling patterned memory layers, lower price‐per‐bit, and customizable multi‐material PCM arrays.

中文翻译：

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喷墨印刷相变存储器件


相变存储器 (PCM) 是超越摩尔定律的计算时代下一代存储级和主存储器系统最有前途的候选者之一。然而，PCM 设备的广泛安装受到每比特高价格和复杂制造工艺的限制。本文表明，功能性 PCM 存储器件可以被打印，为非硅存储技术提供了低成本途径。以 Ge-Sb-Te (GST) 作为案例研究，制备 PCM 油墨并优化其结构、流变和印刷参数。然后，GST 层以平面配置印刷到 PCM 器件上，显示出优异的性能，例如非挥发性、电阻率对比、低周期变异性以及至少 100 个周期的耐久性。本文通过喷墨打印提供了一种基于液体的工程 PCM 器件的新颖方法，可实现图案化存储层、更低的每比特价格以及可定制的多材料 PCM 阵列。