The heat dissipation optimization process is a crucial element in high power high electron mobility transistor (HEMT) components fabricated using the Gallium Nitride grown on silicon (Si) substrate. In this study, the Si substrate is thinned from 1000 to 600 µm, and then the partial device area (under the HEMT two dimension (2D electron concentration gas channel) is etched to 20 µm by a deep etching system. After, three different materials are utilized to fill the gap. There are electroplate copper sheets, silver paste, and copper paste. Afterward, the electrical properties and thermal management of the device are compared before and after the implementation of the heat dissipation process. The horizontal breakdown voltage of the gate and drain at 10 µm distance of copper paste is increased to 430 V compared to 405 V before the heat dissipation process. More importantly, the surface temperature of the device dropped approximately from 58 to 38 °C and the percentage drop in output current is reduced from 10.18% to 5.23%.

中文翻译：

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氮化镓基 HEMT 的散热研究


散热优化过程是使用硅 (Si) 衬底上生长的氮化镓制造的高功率高电子迁移率晶体管 (HEMT) 组件的关键要素。在本研究中，将Si衬底从1000μm减薄至600μm，然后通过深蚀刻系统将部分器件区域（HEMT二维（2D电子浓度气体通道）下方）蚀刻至20μm。之后，三种不同的材料采用电镀铜片、银浆和铜浆来填补间隙。然后，比较实施散热工艺之前和之后器件的电气性能和热管理。与散热过程之前的 405 V 相比​​，铜浆距离 10 µm 处的栅极和漏极电压增加至 430 V 更重要的是，器件的表面温度大约从 58 °C 下降至 38 °C，输出电流下降百分比为从10.18%下降到5.23%。