Post‐oxidation annealing in oxygen (O2) ambient can improve the quality of the SiO2/SiC stack without introducing foreign atoms. In order to reveal the annealing mechanism at different oxygen partial pressures (P(O2)), this work focuses on the dependence of the annealing effect on P(O2) in a wide range from 0.01 Pa to 101 kPa for SiO2/SiC stack. In order to minimize the C‐related defects generated during SiC oxidation, the SiO2/SiC stacks are formed by oxidizing the deposited Si on the SiC epitaxial layer. The electrical characteristics of the annealed samples show that low P(O2) is beneficial to improve the interface quality, and high P(O2) is beneficial to improve the oxide layer quality. In addition, time of flight secondary ion mass spectrometry and X‐ray photoelectron spectroscopy analysis shows that the distribution and filling of oxygen vacancies (V[O]) are consistent with the electrical results. Finally, a model describing V[O] filling amount with P(O2) is proposed to quantitatively characterize the dependence of the annealing effect on P(O2), which shows that the filling amount of V[O] is proportional to P(O2)n (n∼0.065). This model provides theoretical support for improving the quality of SiC MOS by O2 annealing.

中文翻译：

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SiO2/SiC叠层氧分压相关退火效应研究


在氧气 (O2) 环境中进行氧化后退火可以在不引入外来原子的情况下提高 SiO2/SiC 叠层的质量。为了揭示不同氧分压（P（O2））下的退火机制，本工作重点研究了SiO2/SiC叠层在0.01 Pa至101 kPa的宽范围内退火效果对P（O2）的依赖性。为了最大限度地减少 SiC 氧化过程中产生的与 C 相关的缺陷，通过氧化 SiC 外延层上沉积的 Si 来形成 SiO2/SiC 叠层。退火样品的电学特性表明，低P(O2)有利于提高界面质量，高P(O2)有利于提高氧化层质量。此外，飞行时间二次离子质谱和X射线光电子能谱分析表明，氧空位（V[O]）的分布和填充与电学结果一致。最后，提出了用P(O2)描述V[O]填充量的模型，定量表征了退火效应对P(O2)的依赖性，结果表明V[O]的填充量与P(O2)成正比。 )n (n∼0.065)。该模型为O2退火提高SiC MOS质量提供了理论支持。