Studies of investigating intrinsic and defect-induced luminescence in semiconductors can yield valuable insights into the underlying mechanisms and their significance for optoelectronic applications. This research focuses on self-activated lithium antimonate LiSbO, synthesized through a solid-state reaction method. The as-prepared samples underwent post-annealing treatment in air and a CO atmosphere, respectively. The work investigated the phase formation, structures, elemental composition, band transition characteristics, luminescence properties, and decay lifetimes of the self-activated phosphors. LiSbO is identified as an -type semiconductor with a direct allowed transition and the band gap energy of 2.97 eV. The experiment also confirmed the presence of oxygen vacancy (V) centers during the synthesis of LiSbO The self-activated luminescence of LiSbO was found to be sensitive to the post-annealing atmosphere. Notably, post-annealing in a reducing environment significantly enhances the luminescence efficiency. The luminescence characteristics and thermal stability of LiSbO are closely linked to oxygen defects, which play a critical role in the color emissions of this self-activated phosphor.

中文翻译：

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锑酸锂 LiSbO3 的本征发光和缺陷诱导发光


研究半导体中的本征发光和缺陷诱导发光可以对潜在机制及其对光电应用的意义产生有价值的见解。本研究重点关注通过固相反应方法合成的自激活锑酸锂LiSbO。所制备的样品分别在空气和CO气氛中进行后退火处理。该工作研究了自激活荧光粉的相形成、结构、元素组成、带跃迁特性、发光特性和衰变寿命。 LiSbO被确定为具有直接允许跃迁的β型半导体，带隙能为2.97eV。实验还证实了LiSbO的合成过程中存在氧空位（V）中心，并且发现LiSbO的自激活发光对退火后气氛敏感。值得注意的是，还原环境中的后退火显着提高了发光效率。 LiSbO的发光特性和热稳定性与氧缺陷密切相关，氧缺陷在这种自激活荧光粉的颜色发射中起着至关重要的作用。