In this study, Zinc (Zn)- doped nickel oxide (NiO) thin films were fabricated via the electrodeposition method. The synthesized films were created with different concentrations of Zn (2 %, 4 %, 6 %, and 8 %) after that annealed at two different temperatures (300 °C and 500 °C). The prepared samples were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy (RAM), UV–vis spectrophotometry, photocurrent (PC), photoluminescence (PL), electrochemical impedance spectroscopy (EIS), Energy-Dispersive X-ray spectroscopy (EDX), photocurrent (PC), and Mott-Schottky (MS) analysis. XRD patterns indicate that Zn: NiO thin films have a cubic phase, with the (111) direction as the preferred orientation. Various structural parameters such as dislocation density, stacking fault, lattice strain, and crystallite size have been determined. The presence of Zn doping in NiO has been confirmed by EDX analysis. The EDX mapping of elements revealed the uniform distribution of Ni, Zn, and O in the sample. The optical transmittance and absorbance were analyzed using a UV–vis spectrophotometer. The lowest transmittance values were found for 8 % Zn: NiO thin films annealed at 300 °C and 500 °C. The absorption edge corresponding to pure NiO-300 °C and NiO-500 °C has been observed at 300 and 320 nm, respectively. The band gap energy (Eg) decreased to 3.88 eV for 8 %Zn: NiO (300 °C) and 3.71 eV for 8 %Zn: NiO (500 °C). The Raman analysis showed three distinct peaks at 590 cm, 705 cm, and 1172 cm, which correspond to the vibration of Ni—O bonds. The SEM results indicated that increasing the doping concentration and annealing temperature resulted in larger grain sizes in the manufactured samples. Furthermore, the PL spectra analysis of the synthesized films revealed two distinct emission peaks at around 400 and 490 nm. PC analysis confirmed the p-type conductivity of manufactured arrays. From MS measurements, the highest carrier concentration (NA) values of 8.81×10 cm and 9.41×10 cm were obtained for 8 %Zn: NiO (300 °C) and 8 %Zn: NiO (500 °C), respectively. EIS analysis confirmed the highest conductivity and enhanced electrochemical activity for 6 % Zn: NiO (500 °C) and 8 % Zn: NiO (300 °C). These results suggest that Zn-doped NiO is suitable for optoelectronic applications.

中文翻译：

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锌浓度和退火温度对电沉积法合成氧化镍薄膜结构、光学和光电化学性能的影响


在这项研究中，通过电沉积方法制备了锌（Zn）掺杂的氧化镍（NiO）薄膜。在两种不同温度（300 °C 和 500 °C）下退火后，合成薄膜具有不同浓度的 Zn（2%、4%、6% 和 8%）。使用X射线衍射（XRD）、扫描电子显微镜（SEM）、拉曼光谱（RAM）、紫外可见分光光度法、光电流（PC）、光致发光（PL）、电化学阻抗谱（EIS）、能量分析仪对制备的样品进行分析。 -色散 X 射线光谱 (EDX)、光电流 (PC) 和莫特肖特基 (MS) 分析。 XRD 图谱表明 Zn:NiO 薄膜具有立方相，以（111）方向为择优取向。各种结构参数如位错密度、堆垛层错、晶格应变和微晶尺寸已被确定。 EDX 分析证实了 NiO 中存在 Zn 掺杂。元素的 EDX 图显示样品中 Ni、Zn 和 O 的均匀分布。使用紫外可见分光光度计分析光学透射率和吸光度。在 300 °C 和 500 °C 退火的 8% Zn:NiO 薄膜的透射率值最低。分别在 300 和 320 nm 处观察到对应于纯 NiO-300 °C 和 NiO-500 °C 的吸收边。 8%Zn: NiO (300 °C) 的带隙能 (Eg) 降至 3.88eV，8%Zn: NiO (500 °C) 的带隙能 (Eg) 降至 3.71eV。拉曼分析显示在590cm、705cm和1172cm处有三个不同的峰，这对应于Ni-O键的振动。 SEM 结果表明，增加掺杂浓度和退火温度会导致制造的样品晶粒尺寸变大。 此外，合成薄膜的 PL 光谱分析显示在 400 和 490 nm 附近有两个不同的发射峰。 PC 分析证实了制造的阵列的 p 型电导率。根据 MS 测量结果，8%Zn: NiO (300 °C) 和 8%Zn: NiO (500 °C) 的最高载流子浓度 (NA) 值分别为 8.81×10 cm 和 9.41×10 cm。 EIS 分析证实 6% Zn: NiO (500 °C) 和 8% Zn: NiO (300 °C) 具有最高的电导率和增强的电化学活性。这些结果表明Zn掺杂NiO适合光电应用。