In this study, oxygen‐rich TiOy and TiOx layers are intentionally designed to have different oxygen compositions, functioning as an overshoot suppression layer (OSL) and oxygen reservoirs. Furthermore, by natural oxidation reactions occurring between the TiOy/TiOx/Al2O3 switching layer and the Pt/Al top electrode, an additional AlOy layer can be induced to act as an additional OSL. The proposed annealing process accelerates the oxidation reaction of AlOy/TiOy OSLs, thereby enhancing the self‐compliance feature of devices. Moreover, the ultrathin AlN serves as an oxygen barrier layer (OBL) that inhibits the movement of oxygen ions at the interface between the Al2O3 layer and the Pt/Ti bottom electrode. The optimized devices are tested by DC sweep and pulses for neuromorphic computing systems. To realize biological synapse characteristics, several key synaptic memory plasticities are proposed. Finally, a 24 × 24 crossbar array based on the 0T‐1R structure, incorporating optimized AlOy/TiOy OSLs and OBL via the annealing process, is characterized. During the electroforming step, all specified target cells (marked with the letters “ESDL”) achieved self‐compliance at low current levels without experiencing hard‐breakdown failures or interference among neighboring cells. The successful array performance is demonstrated by the accurate tuning of target weights.

中文翻译：

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用于高性能神经形态系统的基于 TiO2 的多层交叉阵列忆阻器中的复杂电导控制和多突触功能


在这项研究中，富氧的 TiOy 和 TiOx 层被有意设计为具有不同的氧成分，充当过冲抑制层 (OSL) 和储氧层。此外，通过 TiOy/TiOx/Al2O3 切换层和 Pt/Al 顶部电极之间发生的自然氧化反应，可以诱导额外的 AlOy 层充当额外的 OSL。所提出的退火过程加速了 AlOy/TiOy OSL 的氧化反应，从而增强了器件的自柔量特性。此外，超薄AlN充当氧阻挡层(OBL)，抑制氧离子在Al2O3层和Pt/Ti底部电极之间的界面处的移动。优化后的器件通过神经形态计算系统的直流扫描和脉冲进行了测试。为了实现生物突触特性，提出了几种关键的突触记忆可塑性。最后，表征了基于 0T-1R 结构的 24 × 24 交叉阵列，通过退火工艺结合了优化的 AlOy/TiOy OSL 和 OBL。在电铸步骤中，所有指定的目标单元（标有字母“ESDL”）在低电流水平下实现了自顺从性，而没有遇到硬击穿故障或相邻单元之间的干扰。目标权重的精确调整证明了阵列性能的成功。