The construction of lateral heterostructures (LHSs) has the potential to adjust the electrical properties and current-illumination characteristics through interfacial interactions, providing new possibilities for the development of electron and photoelectric devices. In this research, the electronic and electrical properties as well as the current-illumination characteristics of the SiC/GaN LHSs have been investigated using first principles. The band structure analysis indicates that the band gap of the SiC/GaN LHSs can be regulated by the number of layers, and the type-II heterostructure and built-in electric field are formed. The SiC/GaN LHS have high electron carrier mobility along the Y-axis and higher current compared to the intrinsic g-GaN and g-SiC under the same forward bias voltage (V_b). Furthermore, the SiC/GaN LHS is a nanoscale p–n junction with a reverse current much smaller than the forward current. Photocurrent exhibits a strong response near-ultraviolet, and the maximum photocurrent is 79.03 a₀²/photon. The results show that SiC/GaN LHSs can be used as a potential material for electron and photoelectric devices.

中文翻译：

---

SiC/GaN横向异质结构的电学特性和电流照明特性


横向异质结构（LHS）的构建具有通过界面相互作用调节电性能和电流照明特性的潜力，为电子和光电器件的发展提供了新的可能性。在这项研究中，利用第一原理研究了 SiC/GaN LHS 的电子和电气特性以及电流照明特性。能带结构分析表明SiC/GaN LHS的带隙可以通过层数调节，并形成II型异质结构和内建电场。在相同的正向偏压（V _b ）下，与本征 g-GaN 和 g-SiC 相比，SiC/GaN LHS 具有沿 Y 轴的高电子载流子迁移率和更高的电流。此外，SiC/GaN LHS是纳米级p-n结，反向电流远小于正向电流。光电流在近紫外区表现出强烈的响应，最大光电流为79.03 a ₀ ² /photon。结果表明SiC/GaN LHSs可作为电子和光电器件的潜在材料。