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Doping for ohmic contacts in 2D transistors
Nature Electronics ( IF 33.7 ) Pub Date : 2024-06-27 , DOI: 10.1038/s41928-024-01191-3 Peng Wu , Jing Kong
Nature Electronics ( IF 33.7 ) Pub Date : 2024-06-27 , DOI: 10.1038/s41928-024-01191-3 Peng Wu , Jing Kong
Atomic-layer yttrium doping can be used to form ohmic contacts between molybdenum disulfide channel layers and metals, creating high-performance 2D transistors with low contact resistances.
中文翻译:
二维晶体管中欧姆接触的掺杂
原子层钇掺杂可用于在二硫化钼沟道层和金属之间形成欧姆接触,从而创建具有低接触电阻的高性能二维晶体管。
更新日期:2024-06-27
中文翻译:
二维晶体管中欧姆接触的掺杂
原子层钇掺杂可用于在二硫化钼沟道层和金属之间形成欧姆接触,从而创建具有低接触电阻的高性能二维晶体管。