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In situ synthesis of vertical graphene on porous Si microparticle composite for high-performance anode material
Electrochimica Acta ( IF 5.5 ) Pub Date : 2024-06-23 , DOI: 10.1016/j.electacta.2024.144617 Chenchen Chen , Run Zheng , Lanshan Ye , Fen Yue , Jiaxin Cheng , Juan Wang , Shenran Zhang , Binbin Wu , Pengpeng Lv , Jie Liang , Jun Li
Electrochimica Acta ( IF 5.5 ) Pub Date : 2024-06-23 , DOI: 10.1016/j.electacta.2024.144617 Chenchen Chen , Run Zheng , Lanshan Ye , Fen Yue , Jiaxin Cheng , Juan Wang , Shenran Zhang , Binbin Wu , Pengpeng Lv , Jie Liang , Jun Li
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is capable of delivering a high theoretical specific capacity (4200 mAh g) in . However, has poor , huge volume expansion (∼300%), and unstable (SEI) film, especially for micron-sized particles. We proposed and prepared a novel vertical carbon (VG) coating on a porous (p-Si) microparticle structure, which effectively alleviated the volume expansion and inhibited the interface reaction. The synthesized porous silicon p-Si@VG composite exhibited significant enhanced cycling stability and an excellent reversible capacity of 1563 mAh g (capacity retention of 48.6%) after 200 cycles. The vertical carbon nanosheet structure constructed a three-dimensional conductive network. Therefore, the p-Si@VG composite showed better rate capability and higher lithium-ion diffusion rates. This work is expected to promote the application of micron Si-based composites in .
中文翻译:
原位合成多孔硅微粒复合材料上的垂直石墨烯高性能负极材料
能够提供高理论比容量(4200 mAh g)。然而,其薄膜质量差、体积膨胀巨大(∼300%)且不稳定(SEI),特别是对于微米级颗粒。我们提出并制备了一种新型的多孔(p-Si)微粒结构上的垂直碳(VG)涂层,可有效缓解体积膨胀并抑制界面反应。合成的多孔硅p-Si@VG复合材料表现出显着增强的循环稳定性和200次循环后1563 mAh g的优异可逆容量(容量保持率为48.6%)。垂直的碳纳米片结构构建了三维导电网络。因此,p-Si@VG复合材料表现出更好的倍率性能和更高的锂离子扩散速率。该工作有望推动微米硅基复合材料在航空航天领域的应用。
更新日期:2024-06-23
中文翻译:
![](https://static.x-mol.com/jcss/images/paperTranslation.png)
原位合成多孔硅微粒复合材料上的垂直石墨烯高性能负极材料
能够提供高理论比容量(4200 mAh g)。然而,其薄膜质量差、体积膨胀巨大(∼300%)且不稳定(SEI),特别是对于微米级颗粒。我们提出并制备了一种新型的多孔(p-Si)微粒结构上的垂直碳(VG)涂层,可有效缓解体积膨胀并抑制界面反应。合成的多孔硅p-Si@VG复合材料表现出显着增强的循环稳定性和200次循环后1563 mAh g的优异可逆容量(容量保持率为48.6%)。垂直的碳纳米片结构构建了三维导电网络。因此,p-Si@VG复合材料表现出更好的倍率性能和更高的锂离子扩散速率。该工作有望推动微米硅基复合材料在航空航天领域的应用。