Fluorite‐structured ferroelectrics are one of the most promising material systems for emerging memory technologies. However, when integrated into electronic devices, these materials exhibit strong imprint effects that can lead to a failure during writing or retention operations. To improve the performance and reliability of these devices, it is cardinal to understand the physical mechanisms underlying the imprint during operation. In this work, the comparison of First‐Order Reversal Curves measurements with a new gradual switching experimental approach named “Unipolar Reversal Curves” is used to analyze both the fluid imprint and the time‐dependent imprint effects within a 10 nm‐thick Hf0.5Zr0.5O2 capacitor. Interestingly, the application of delay times (ranging from 100 µs up to 10 s) between the partial switching pulses of a Unipolar Reversal Curve sequence enables analysis of the connection between the two aforementioned imprint types. Based on these results, the study finally reports a unified physical interpretation of imprint in the context of a charge injection model, which explains both types of imprint and sheds light on the dynamics of multi‐level polarization switching in ferroelectrics.

中文翻译：

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铁电电容器的压印和多级动力学评估


萤石结构铁电体是新兴存储技术最有前途的材料系统之一。然而，当集成到电子设备中时，这些材料表现出强烈的压印效应，可能导致写入或保留操作期间发生故障。为了提高这些设备的性能和可靠性，了解操作过程中压印背后的物理机制至关重要。在这项工作中，将一阶反转曲线测量与一种名为“单极反转曲线”的新渐进切换实验方法进行比较，用于分析 10 nm 厚的 Hf0.5Zr0 内的流体压印和时间依赖性压印效应.5O2电容。有趣的是，在单极反转曲线序列的部分开关脉冲之间应用延迟时间（范围从 100 µs 到 10 s）可以分析上述两种压印类型之间的联系。基于这些结果，该研究最终报告了电荷注入模型背景下对印记的统一物理解释，该解释解释了两种类型的印记并揭示了铁电体中多级极化切换的动力学。