Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner. However, complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices. The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma. This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films. The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated. Finally, the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.

由于铁电体可以通过外部电场以非易失性方式对极化状态进行编程，因此在非易失性存储器领域具有巨大的潜力。然而，互补金属氧化物半导体的兼容性和尺寸缩放后铁电性能的均匀性一直是阻碍铁电存储器件实际应用的两个棘手问题。纤锌矿结构氮化物的新兴铁电性为规避这一困境提供了机会。本综述涵盖了铁电 AlScN 薄膜中的铁电机制和磁畴动力学。总结了通过不同技术生长的 AlScN 薄膜的性能优化，并说明了它们在存储器和新兴内存计算中的应用。最后，讨论了铁电 AlScN 商业化面临的挑战和前景。