The field-effect transistor (FET) is a cornerstone of modern electronics, pivotal in the development of compact and efficient integrated microprocessors and memory storage devices capable of low-power operation. At the heart of a FET is a semiconductor channel, typically made of materials such as silicon, which links the source to the drain. Positioned directly beneath an insulator that overlays the gate, this channel's conductivity or mobility, which measures the ease of current flow, is controlled by the electric field resulting from the voltage applied to the gate. Consequently, this setup allows the gate voltage to modulate the current, effectively turning it on and off.

中文翻译：

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接近范德华层状半导体接触电阻的量子极限


场效应晶体管 (FET) 是现代电子产品的基石，对于开发紧凑高效的集成微处理器和能够低功耗运行的内存存储设备至关重要。 FET 的核心是半导体沟道，通常由硅等材料制成，将源极与漏极连接起来。该沟道直接位于覆盖栅极的绝缘体下方，其电导率或迁移率用于测量电流流动的难易程度，由施加到栅极的电压产生的电场控制。因此，这种设置允许栅极电压调制电流，从而有效地打开和关闭电流。